Abstract
We show that the unusual optical properties of GaAs/AIAs heterostructures grown on (111), (211) and (311) oriented substrates can be understood in terms of additional lateral quantum size effects created by regular arrays of macrosteps evolving during molecular beam epitaxy. Asymmetric pyramides are formed on the (211) surface, periodic channels on the (311) surface, and symmetric pyramides on the (111) surface. In GaAs/AIAs multilayer structures the well-ordered alternating wide and narrow regions of GaAs and AlAs then form symmetric and asymmetric quantum-dot arrays on (111) and (211) substrates, resp., and quantum-wire arrays on (311) substrates
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© 1993 Springer Science+Business Media Dordrecht
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Ploog, K., Nötzel, R. (1993). Do Periodic Interface Corrugations Cause the Unusual Optical Properties of GaAs/AIAs Heterostructures Grown on Non-(100)-Oriented Substrates?. In: Salemink, H.W.M., Pashley, M.D. (eds) Semiconductor Interfaces at the Sub-Nanometer Scale. NATO ASI Series, vol 243. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2034-0_24
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DOI: https://doi.org/10.1007/978-94-011-2034-0_24
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