Semiconductor Interfaces: Structure, Properties and Processing at the Atomic Level

Abstract

Properties of thin films in general, and interfaces in particular, are often strongly influenced by departures from “perfection”. These can take the form of extended defects such as dislocations, interfacial roughness, or point defects. Direct imaging of extended defects was one of the early contributions of electron microscopy to solid-state science. Since then, the role of extended defects in controlling the fabrication and properties of thin films and their interfaces has been extensively studied and reviewed.[[1]] Recently, in-situ observation of strain relaxation in thin film structures has increased our understanding of dislocation kinetics, and its effect on properties of interfaces.[[2]] [[3]] Here, we focus on electron microscopic studies of interfacial roughness. Structure and properties of interfaces cannot be covered in a single review. For this reason, and because fabrication of semiconducting thin films has reached unprecedented levels of sophistication, the presentation in illustrated by reference to semiconducting materials