Abstract
UV photoelectron spectroscopy (UPS) measurements performed in-situ in the growth chamber were used to study the interface structure in GaInAs/GaAs and GaInAs/InP heterostructures. A surface segregation model is developed and the In segregation energy determined experimentally. The effect of In segregation is to create gradual profiles at the direct interface (GaInAs grown on GaAs) and to incorporate some In in the GaAs barrier at the inverted interface. This segregation energy was used to generate potential energy profiles in a calculation of the energy of photoluminescence lines in thin GaInAs/GaAs quantum wells. The quantitative agreement in very good. In a second part, a UPS determination of the valence band offsets (VBO) in GaInAs/InP lattice-matched heterostructures is presented. A strong asymmetry is observed and discussed in parallel with the chemical asymmetry, also related to In segregation, and with a recent tight-binding calculation of the VBO in this system, which shows a clear dependence on the interface chemistry
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© 1993 Springer Science+Business Media Dordrecht
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Landesman, J.P. et al. (1993). Interface Chemical Structure, Band Offsets and Optical Properties of Various III-V Compounds Heterostructures. In: Salemink, H.W.M., Pashley, M.D. (eds) Semiconductor Interfaces at the Sub-Nanometer Scale. NATO ASI Series, vol 243. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2034-0_11
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DOI: https://doi.org/10.1007/978-94-011-2034-0_11
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