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Optical Properties of Porous Silicon

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Optical Phenomena in Semiconductor Structures of Reduced Dimensions

Part of the book series: NATO ASI Series ((NSSE,volume 248))

Abstract

The optical properties of porous Si films produced by electrochemical dissolution of Si are reviewed. From measurements of the optical absorption spectra of a number of samples, an inverse relationship between the optical gap energy and the average nanoparticle size is obtained demonstrating for the first time the quantum confinement of electron-hole pairs in porous Si. Two different sources of photoluminescence in anodized Si have been identified.

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Authors and Affiliations

  1. Institute for Microstructural Sciences, National Research Council Ottawa, Ontario, K1A 0R6, Canada

    D.J. Lockwood

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Editors and Affiliations

  1. National Research Council, Ottawa, Ontario, Canada

    David J. Lockwood

  2. AT&T Bell Laboratories, Murray Hill, New Jersey, USA

    Aron Pinczuk

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Lockwood, D. (1993). Optical Properties of Porous Silicon. In: Lockwood, D.J., Pinczuk, A. (eds) Optical Phenomena in Semiconductor Structures of Reduced Dimensions. NATO ASI Series, vol 248. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-1912-2_36

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  • DOI: https://doi.org/10.1007/978-94-011-1912-2_36

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