Abstract
Luminescence properties of doped and undoped GaAs/(AlGa)As quantum wells, wires, dots, and antidots are discussed. The complex lineshape of high quality modulation doped single quantum wells can be understood in terms of wave vector conserving and nonconserving transitions. A shallow etching technique together with holographic optical lithography results in a spatial separation of electrons and photogenerated holes. The luminescence features of wires, dots, and antidots show both direct and indirect character in real space. Isolated single quantum dots have been fabricated by local interdiffusion of undoped GaAs/AlGaAs quantum wells. Due to the inherent exclusion of inhomogeneous broadening in single dot structures very sharp luminescence lines are observed in originally 3 nm wide quantum wells.
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© 1993 Springer Science+Business Media Dordrecht
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Abstreiter, G., Böhm, G., Brunner, K., Hirler, F., Strenz, R., Weimann, G. (1993). Luminescence Properties of GaAs Quantum Wells, Wires, Dots, and Antidots. In: Lockwood, D.J., Pinczuk, A. (eds) Optical Phenomena in Semiconductor Structures of Reduced Dimensions. NATO ASI Series, vol 248. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-1912-2_28
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DOI: https://doi.org/10.1007/978-94-011-1912-2_28
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