Abstract
We report on the growth of InP/In0.48Ga0.52P islands on (001) GaAs substrates by solid-source molecular beam epitaxy. The islands evolve due to the lattice mismatch of 3.7% between InP and In0.48Ga0.52P. After a deposit of nominally 2 monolayers the island formation has already started according to atomic force microscopy. InP photoluminescence of free standing islands is measured. The InP photoluminescence shifts typically to about 100 meV higher energy in presence of an In0.48Ga0.52P cap layer. A minimum linewidth of 27 meV is obtained by an immediate deposit of the cap layer after the growth of the coherently strained islands at a typical substrate temperature of 470 °C in case of 3.0 MLs InP. The luminescence consists of a large number of sharp, single peaks as demonstrated by a microscope spectroscopy technique which probes an area only 1.5 μm in diameter. The localized character of the luminescence is illustrated by a spatially and energetically resolved mapping of the sample.
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Kurtenbach, A., Eberl, K., Brunner, K., Abstreiter, G. (1995). Self-Assembling InP/In0.48Ga0.52P Quantum Dots Grown by MBE. In: Eberl, K., Petroff, P.M., Demeester, P. (eds) Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates. NATO ASI Series, vol 298. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0341-1_6
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DOI: https://doi.org/10.1007/978-94-011-0341-1_6
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