Abstract
Investigations of semiconductor quantum dot structures have been predominately conducted on lithographically defined 2-dimensional electron gas structures at milli-Kelvin temperatures. Intriguing observations such as electron wave effects, single electron charging effects and electron-electron interactions have been observed. Although this work continues to expand our understanding of 0-dimensionally confined systems, higher temperature operating devices are limited because current lithography techniques are limited to approximately 500Å feature sizes. An alternative approach is the use of growth induced islanding in strained heteroepitaxial semiconductor systems to create 0-dimensional systems without using lithography. Whereas the milli-Kelvin experiments use mature growth and lithography techniques, the growth induced islanding approach is comparatively new and current efforts in this area are devoted to understanding and controlling the growth of these islands and simple optical and electronic characterization. In this paper we bring together our recent work in these two areas.
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Solomon, G.S., Duruöz, C.I., Trezza, J.A., Clarke, R.M., Marcus, C.M., Harris, J.S. (1995). Growth Induced and Patterned 0-Dimensional Quantum Structures. In: Eberl, K., Petroff, P.M., Demeester, P. (eds) Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates. NATO ASI Series, vol 298. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0341-1_29
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DOI: https://doi.org/10.1007/978-94-011-0341-1_29
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