Abstract
During growth of Si on vicinal Si(111) we observe a smoothing of the equilibrium faceted surface morphology to one which contains a uniform density of steps after a few hundred monolayers. The (7×7) reconstruction disappears concurrently with the change in step structure. The smoothing only occurs within a narrow range of temperature beneath the equilibrium faceting temperature. The smoothed surface is robust at its formation temperature, lasting tens of hours in the absence of a Si flux, but metastable below this temperature. It is distinct from the high temperature “1×1” surface. Observations of a disordering of the (7×7) on the singular surface under nearly identical conditions indicate that it is the gradual disordering of the reconstruction on the (111) facets during growth and the step-step repulsion which drive the smoothing.
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Phaneuf, R.J., Kan, HC., Williams, E.D. (1995). Evolution of Si Surface Nanostructure under Growth Conditions. In: Eberl, K., Petroff, P.M., Demeester, P. (eds) Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates. NATO ASI Series, vol 298. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0341-1_17
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DOI: https://doi.org/10.1007/978-94-011-0341-1_17
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