Abstract
The techniques of reflectance anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) have been employed in concert to characterize the growth of sub-monolayer coverages of both Si and Be deposited, by molecular beam epitaxy (MBE), onto the GaAs(001)-c(4×4) and (2×4)-β reconstructed surfaces. The RAS measurements were found to be sensitive to the deposition of 1/200th of a monolayer (ML) of both Si and Be, thus demonstrating the applicability of an integrated RHEED-RAS system for monitoring sub-monolayer heteroepitaxial growth.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Schubert, E.F. (1990), Delta doping of III-V compound semiconductors: fundamentals and device applications. J.Vac.Sci.Technol. A8, 2980–2996.
Harris, J.J., Clegg, J.B., Beall, R.B., Castagné, J., Woodbridge, K. and Roberts, C. (1991), Delta-doping of GaAs and A10,33Ga0,67As with Sn, Si and Be: a comparative study. J. Crystal Growth 111, 239–245.
Shen, T.-H., Elliott, M., Williams, R.H., Woolf, D.A., Westwood, D.I. and Ford, A.C. (1992), Control of semiconductor interface barriers by 8-doping. Applied Surface Science 56-58, 749–755.
Sorba, L., Bratina, G., Antonini, A., Franciosi, A., Tapfer, L., Migliori, A. and Merli, P. (1992), Strucxture and local dipole of Si interface layers in AlAs-GaAs heterostructures. Physical Review B 46, 6834–6845.
Akazawa, M., Hasegawa, H., Tomozawa, H. and Fujikura, H. (1992), Reappraisal of Si-interlayer-induced change of band discontinuity at GaAsAlAs heterointerface taking account of delta-doping. Jpn. J. Appl. Phys. 31, L1012–L1014.
Brandt, O., Crook, G., Ploog, K., Bierwolf, R., Hohenstein, M., Maier, M. and Wagner, J. (1993), Nucleation, relaxation and redistribution of Si layers in GaAs. Jpn. J. Appl. Phys. 32, L24–L27.
Hart, L., Fahy, M.R., Newman, R.C. and Fewster, P.F. (1993), X-ray characterization of Si 8-doping in GaAs. Appl. Phys. Lett. 62, 2218–2220.
Sorba, L., Bratina, G., Franciosi, A., Tapfer, L., Scamarcio, G., Spagnolo, V., Migliori, A., Merli, P. and Molinari, E. (1993), Si-GaAs(001) superlattice structure. J. Crystal Growth 127, 121–125.
Fahy, M.R., Ashwin, M.J., Harris, J.J., Newman, R.C. and Joyce, B.A. (1992), Reflection high-energy electron diffraction study of the GaAs:Si:GaAs system. Appl. Phys. Lett. 61, 1805–1807.
Kamiya, I., Aspnes, D.E., Tanaka, H., Florez, L.T., Koza, M.A., Bhat, R. and Harbison J.P. (1993), Surface reconstruction of GaAs(001) during OMCVD growth. Philosophical Transactions of the Royal Society: Phys. Sci & Eng. 344, 443–452.
Richter, W. Optical in situ surface control during MOVPE and MBE growth. ibid., 344, 453–467.
G.J.Davies and R.H.Williams (Eds.), Semiconductor Growth, Surfaces and Interfaces. Chapman & Hall, London, (1994), pp.1–10 and 11–24.
Tanaka, H., Colas, E., Kamiya, I., Aspnes, D.E. and Bhat, R. (1991), In situ determination of free-carrier concentrations by reflectance difference spectroscopy. Appl. Phys. Lett. 59, 3443–3445.
Westwood, D.I., Woolf, D.A. and Williams, R.H. (1989), Growth of Inx Ga1-x As on GaAs(001) by molecular beam epitaxy. J. Crystal Growth 98, 782–792.
Scholz, S.M., Müller, A.B., Richter, W., Zahn, D.R.T., Westwood, D.I., Woolf, D.A., Williams, R.H. (1992), Analysis of molecular-beam epitaxial growth of InAs on GaAs(100) by reflection anisotropy spectroscopy. J.Vac.Sci. Technol. B1O, 1710–1715.
Aspnes, D.E., Harbison, J.P., Stadna, A.A., Florez, L.T. and Kelly, M.K. (1988), Application of reflectance difference spectroscopy to molecular beam epitaxy growth of GaAs and AlAs. J.Vac.Sci. Technol. A6, 1327–1332.
Kamiya, I., Aspnes, D.E., Florez, L.T. and Harbison, J.P. (1992), Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrhigh vacuum. Physical Review B 46, 15895–15904.
Woolf, D.A., Rose, K.C., Rumberg, J., Westwood, D.I., Reinhardt, F., Morris, S.J., Richter, W. and Williams, R.H. (1994), Reflectance anisotropy spectroscopy and reflection high-energy electron diffraction of submonolayer coverages of Si grown on GaAs(001) by molecular beam epitaxy. Physical Review B. 51, 4691–4694.
Ashwin, M.J., Fahy, M., Harris, J.J., Newman, R.C., Sansom, D.A., Addinall, R., McPhail, D.S. and Sharma, V.K.M. (1993), The lattice locations of silicon atoms in delta-doped layers in GaAs. J.Appl.Phys. 73, 633–639.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1995 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Woolf, D.A. et al. (1995). The characterization of the growth of sub-monolayer coverages of Si and Be on GaAs(001)-c(4×4) & (2×4)-β by reflectance anisotropy spectroscopy and reflection high-energy electron diffraction. In: Eberl, K., Petroff, P.M., Demeester, P. (eds) Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates. NATO ASI Series, vol 298. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0341-1_11
Download citation
DOI: https://doi.org/10.1007/978-94-011-0341-1_11
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-4151-5
Online ISBN: 978-94-011-0341-1
eBook Packages: Springer Book Archive