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Part of the book series: NATO ASI Series ((NSSE,volume 298))

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Abstract

Epitaxial growth in the submonolayer stage of deposition can exert a strong influence on the multilayer morphology. In the presence of barriers to interlayer atomic transport, the submonolayer island distribution can act as a template for the growth of three-dimensional islands. We investigate the form of the distribution of island sizes in the precoalescence regime as a function of growth conditions and in the presense of strain (for heteroepitaxial systems) and show how both growth conditions and material parameters affect the development of the surface morphology. We also consider the development of the surface morphology during chemical etching and show that similar considerations apply as for growth, with monovacancies and vacancy islands playing the roles of adatoms and adatom islands, respectively.

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Vvedensky, D.D., Ć milauer, P., Ratsch, C., Zangwill, A. (1995). Submonolayer Template Formation for Epitaxial Processes. In: Eberl, K., Petroff, P.M., Demeester, P. (eds) Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates. NATO ASI Series, vol 298. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0341-1_1

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  • DOI: https://doi.org/10.1007/978-94-011-0341-1_1

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4151-5

  • Online ISBN: 978-94-011-0341-1

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