Skip to main content

Diamond Particles on Silicon Tips: Preparation, Structure, and Field Emission Properties

  • Chapter
Wide Band Gap Electronic Materials

Part of the book series: NATO ASI Series ((ASHT,volume 1))

  • 349 Accesses

Abstract

Negative electron affinity (NEA) of diamond as a property inherent in the material is known for a time [1]. Quite recently, the property has attracted a strong interest for applications in vacuum microelectronics and in other fields of modern science and technology [2]. Tentative applications in field-emission displays (FED) is probably one of the most popular.

Diamond particles with sizes in the micrometer range were deposited onto sharpened Si tips. A marked tendency for deposition of the particles on very end of the tips was observed. Field emission studies of the tips with the particles have shown that the emitters have a decreased work function.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 299.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 379.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 379.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Himpsel,F.J., Knapp,J.A., Van Vechten,J.A., and Eastman,D.E. (1979) Quantum photoyield of diamond (111) -a stable negative affinity emitter, Phys. Rev. B20, 624–627.

    Google Scholar 

  2. Geis,M.W., Twichel,J.C., Bozler,C.O., Rathman,D.D., Efremov,N.N., Krohn,K.E., Hollis,M.A., Uttaro,R., Lyszcard,T.M., and Kordesh,M.(1993) Diamond field-emission cathodes, Paper at 6th Intern. Conf. Vacuum Microelectr., Newport, RI, USA.

    Google Scholar 

  3. Givargizov,E.I.(1993)Ultrasharp tips for field emission applications prepared by the vapor-liquid-solid growth technique, J. Vac. Sei. Technol. B11, 449–453.

    Google Scholar 

  4. Marcus,R.B., Ravi,T.S., Gmitter,T., Chen,K., Liu,D., Orvis,W.J., Ciarlo,D.R., Hunt,C.E., and Trujillo,J. (1990) Formation of silicon tips with > 1nm radius, Appl. Phys. Lett. 56, 236–238.

    Article  CAS  Google Scholar 

  5. Givargizov,E.I., Kiselev,A.N., Obolenskaya,L.N., and Stepanova,A.N. (1993) Nanometric tips for scanning probe devices, Appl. Surf. Sci. 67, 73–81.

    Article  CAS  Google Scholar 

  6. Givargizov,E.I., Zhirnov,V.V., Kuznetsov,A.V., and Plekhanov,P.S. (1993) Growth of diamond particles on sharpened silicon tips, Mater. Lett. 18, 61–63.

    Article  CAS  Google Scholar 

  7. Yamaguchi,A., Ihara,M., and Komiyama,H. (1994) Temperature dependence of growth rate for diamonds grown using a hot filament assisted chemical vapor deposition method at low substrate temperatures, Appl. Phys. Lett. 64, 1306–1308.

    Article  CAS  Google Scholar 

  8. Spitsyn,B.V., Bouilov,L.L., and Deryagin,B.V.(1988) Diamond and diamond-like films: deposition from vapour phase, structure, and properties, Proqr. Cryst. Growth Charact. 17, 79–170.

    Article  CAS  Google Scholar 

  9. Dennig,P.A. and Stevenson,D.A.(1991) Influence of substrate topography on the nucleation of diamond thin films, Appl. Phys• Lett. 59, 1562–1564.

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 1995 Springer Science+Business Media Dordrecht

About this chapter

Cite this chapter

Givargizov, E.I. et al. (1995). Diamond Particles on Silicon Tips: Preparation, Structure, and Field Emission Properties. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_5

Download citation

  • DOI: https://doi.org/10.1007/978-94-011-0173-8_5

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4078-5

  • Online ISBN: 978-94-011-0173-8

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics