Abstract
Negative electron affinity (NEA) of diamond as a property inherent in the material is known for a time [1]. Quite recently, the property has attracted a strong interest for applications in vacuum microelectronics and in other fields of modern science and technology [2]. Tentative applications in field-emission displays (FED) is probably one of the most popular.
Diamond particles with sizes in the micrometer range were deposited onto sharpened Si tips. A marked tendency for deposition of the particles on very end of the tips was observed. Field emission studies of the tips with the particles have shown that the emitters have a decreased work function.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Himpsel,F.J., Knapp,J.A., Van Vechten,J.A., and Eastman,D.E. (1979) Quantum photoyield of diamond (111) -a stable negative affinity emitter, Phys. Rev. B20, 624–627.
Geis,M.W., Twichel,J.C., Bozler,C.O., Rathman,D.D., Efremov,N.N., Krohn,K.E., Hollis,M.A., Uttaro,R., Lyszcard,T.M., and Kordesh,M.(1993) Diamond field-emission cathodes, Paper at 6th Intern. Conf. Vacuum Microelectr., Newport, RI, USA.
Givargizov,E.I.(1993)Ultrasharp tips for field emission applications prepared by the vapor-liquid-solid growth technique, J. Vac. Sei. Technol. B11, 449–453.
Marcus,R.B., Ravi,T.S., Gmitter,T., Chen,K., Liu,D., Orvis,W.J., Ciarlo,D.R., Hunt,C.E., and Trujillo,J. (1990) Formation of silicon tips with > 1nm radius, Appl. Phys. Lett. 56, 236–238.
Givargizov,E.I., Kiselev,A.N., Obolenskaya,L.N., and Stepanova,A.N. (1993) Nanometric tips for scanning probe devices, Appl. Surf. Sci. 67, 73–81.
Givargizov,E.I., Zhirnov,V.V., Kuznetsov,A.V., and Plekhanov,P.S. (1993) Growth of diamond particles on sharpened silicon tips, Mater. Lett. 18, 61–63.
Yamaguchi,A., Ihara,M., and Komiyama,H. (1994) Temperature dependence of growth rate for diamonds grown using a hot filament assisted chemical vapor deposition method at low substrate temperatures, Appl. Phys. Lett. 64, 1306–1308.
Spitsyn,B.V., Bouilov,L.L., and Deryagin,B.V.(1988) Diamond and diamond-like films: deposition from vapour phase, structure, and properties, Proqr. Cryst. Growth Charact. 17, 79–170.
Dennig,P.A. and Stevenson,D.A.(1991) Influence of substrate topography on the nucleation of diamond thin films, Appl. Phys• Lett. 59, 1562–1564.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1995 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Givargizov, E.I. et al. (1995). Diamond Particles on Silicon Tips: Preparation, Structure, and Field Emission Properties. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_5
Download citation
DOI: https://doi.org/10.1007/978-94-011-0173-8_5
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-4078-5
Online ISBN: 978-94-011-0173-8
eBook Packages: Springer Book Archive