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Wide Band Gap Electronic Materials pp 453–461Cite as

Wide Band Gap Electronic Devices

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Part of the book series: NATO ASI Series ((ASHT,volume 1))

Abstract

This paper summaries the recent experimental results on silicon carbide and gallium nitride electronic devices. These semiconductors are far ahead in terms of device fabrication than other wide band gap materials because of progress in epitaxial growth, doping, p-n junction fabrication and contact development. Optoelectronic devices, as well as high-temperature, high-power and microwave devices are reviewed.

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Author information

Authors and Affiliations

  1. A.F. loffe Institute, 26 Polytechnicheskaya Street, St. Petersburg, 194021, Russia

    V. E. Chelnokov

  2. Cree Research EED, 26 Polytechnicheskaya Street, St. Petersburg, 194021, Russia

    K. V. Vassilevski

  3. Cree Research, Inc., 2810 Meridian Parkway, Durham, NC, 27713, USA

    V. A. Dmitriev

Authors
  1. V. E. Chelnokov
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  2. K. V. Vassilevski
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  3. V. A. Dmitriev
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Editor information

Editors and Affiliations

  1. University of Missouri-Columbia, Columbia, Missouri, USA

    Mark A. Prelas  & Tina Stacy  & 

  2. Florida A&M University/Florida State University, Tallahassee, Florida, USA

    Peter Gielisse

  3. Rockford Diamond Technology, Inc., Columbia, Missouri, USA

    Galina Popovici

  4. Russian Academy of Sciences, Moscow, Russia

    Boris V. Spitsyn

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© 1995 Springer Science+Business Media Dordrecht

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Chelnokov, V.E., Vassilevski, K.V., Dmitriev, V.A. (1995). Wide Band Gap Electronic Devices. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_47

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  • DOI: https://doi.org/10.1007/978-94-011-0173-8_47

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4078-5

  • Online ISBN: 978-94-011-0173-8

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