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Wide Band Gap Electronic Materials pp 335–372Cite as

Electronic Structure and Related Properties of Tetrahedrally Bonded Wide-Band-Gap Materials Containing Early Elements of the Periodic Table

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Part of the book series: NATO ASI Series ((ASHT,volume 1))

Abstract

The tetrahedrally bonded materials involving early elements of the periodic table, such as Be, B, C, and N have rather extreme properties compared to the conventional tetrahedrally bonded semiconductors. These unique properties make them interesting for a variety of applications, including their use as hard coatings for mechanical tools, metal/ceramic composites, heat-sinks, and electronics. The latter are the most demanding type of applications because they require semiconductor grade purity single crystalline material in order to realize the superior performance these materials promise to have. But their extreme properties also makes them difficult materials to grow in the form of pure single crystals. Their properties are thus not yet very well known. In order to make a rational choice of material for specific applications, it is necessary to understand the interrelationships between the intrinsic materials properties and the trends in these properties with atomic number, crystal structure, and so on. Virtually all materials properties can in ultimate instance be related to the underlying electronic structure. The purpose of this paper is to describe the basic trends in electronic structure of these materials and some of their related properties. The results presented here are based on a systematic study of the electronic structure of these materials carried out over a number of years in our research group. Although many of the results discussed here were presented elsewhere they were not included in an overall description of the trends as presented here. Some new results are included as well. Extensive references are provided as a guide to our previous work not covered here in detail.

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Authors and Affiliations

  1. Department of Physics, Case Western Reserve University, Cleveland, OH, 44106-7079, USA

    W. R. L. Lambrecht, C. H. Lee, K. Kim, A. G. Petukhov, E. A. Albanesi & B. Segall

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  1. W. R. L. Lambrecht
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  2. C. H. Lee
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  3. K. Kim
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  4. A. G. Petukhov
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  5. E. A. Albanesi
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Editors and Affiliations

  1. University of Missouri-Columbia, Columbia, Missouri, USA

    Mark A. Prelas  & Tina Stacy  & 

  2. Florida A&M University/Florida State University, Tallahassee, Florida, USA

    Peter Gielisse

  3. Rockford Diamond Technology, Inc., Columbia, Missouri, USA

    Galina Popovici

  4. Russian Academy of Sciences, Moscow, Russia

    Boris V. Spitsyn

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Lambrecht, W.R.L., Lee, C.H., Kim, K., Petukhov, A.G., Albanesi, E.A., Segall, B. (1995). Electronic Structure and Related Properties of Tetrahedrally Bonded Wide-Band-Gap Materials Containing Early Elements of the Periodic Table. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_36

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