Device for Growing and Doping in the Growth Process of Thin A1N Films

Abstract

Among the known methods of growing thin A1N films by ion sputtering a definite place belongs to growth regimes realized by planar magnetrons [1] and gas discharge ion sources [2]. The possibility to combine growth processes and many new technological methods of growing films open the way to improve the equipment on the base of matched action of magnetron sputtering and sputtering by ion beam, which enables to activate the growth surface and the growing A1N film by a beam of slow electrons in a unified deposition device. Such an approach was considered for the first time in [3], being developed further in [4-6]. In the present paper attention is payed to a new construction of sputtering device and to more complete utilization of the advantages acquired by combining planar magnetron with ion sources.