Abstract
The real surfaces of the high-resistivity p-type silicon and surfaces coated by a-C:H films have been investigated. It has been found that the natural oxide behaves as tunnel isolator stored charge near the surface. Just owing to this the surface of p-type Si can become a strong n-type semiconductor at the liquid nitrogen temperature. The resistivity of this n-channel depends on the cool condition.
It has been shown that a-C:H coating can be to produce stable semiconductor radiation detectors.
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© 1995 Springer Science+Business Media Dordrecht
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Kotina, I.M. et al. (1995). Application of Amorphous Hydrogenated Carbon Coating to Semiconductor Radiation Detectors. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_30
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DOI: https://doi.org/10.1007/978-94-011-0173-8_30
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