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Thermal Stability and Structural Reactions at the Tantalum /a-C Interface under Vacuum Annealing Conditions

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Wide Band Gap Electronic Materials

Part of the book series: NATO ASI Series ((ASHT,volume 1))

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Abstract

Thermal stability, structural changes, and reactions at the tantalum/amorphous carbon(Ta/a-C) interface in the annealing temperature range from 100 to 1000°C have been investigated by AES, RBS, TEM, and Raman spectroscopy. It is found that 800°C is the threshold temperature at which carbon atoms begin to diffuse into the tantalum film and form inclusions of a carbide phase.

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References

  1. Gildenblat G.Sh., Grot S.A., Wronski C.R., Badzian A.R., Badzian T., and Messier R. (1988) Electrical characteristics of Schottky diodes fabricated using Plasma assisted chemical vapor deposited diamond films, Appl. Phys. Lett. 53, 586–588.

    Article  CAS  Google Scholar 

  2. Himpsel F.J., Heimann P., and Eastman D.E. (1980) Schottky barriers on diamond (111), Solid state Commun. 36, 631–633.

    Article  CAS  Google Scholar 

  3. Lurie P.G., and Wilson J.M. (1977) The diamond surface, Surf. Science 65, 453–474.

    Article  CAS  Google Scholar 

  4. Moazed K.L., Nguyen R., and Zeidler J.R. (1988) Ohmic Contacts to Semiconducting Diamond, IEEE Electr. Dev. lett. EDL-9, 350–351.

    Article  Google Scholar 

  5. Huong P.V. (1991) structural studies of diamond films and ultrahard materials by Raman and micro-Raman spectroscopies, Diamond Relat. Mater. 1, 33–40.

    Article  CAS  Google Scholar 

  6. Robertson J. (1986) Amorphous carbon, Advances in Physics 35, 317–339.

    Article  CAS  Google Scholar 

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Author information

Authors and Affiliations

  1. Research Center of Electronic Materials and Technologies, 66, Minsk, 220029, Belarus

    A. P. Novikov, E. A. Shilova, L. D. Buiko & V. A. Zaikov

Authors
  1. A. P. Novikov
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  2. E. A. Shilova
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  3. L. D. Buiko
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  4. V. A. Zaikov
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Editor information

Editors and Affiliations

  1. University of Missouri-Columbia, Columbia, Missouri, USA

    Mark A. Prelas  & Tina Stacy  & 

  2. Florida A&M University/Florida State University, Tallahassee, Florida, USA

    Peter Gielisse

  3. Rockford Diamond Technology, Inc., Columbia, Missouri, USA

    Galina Popovici

  4. Russian Academy of Sciences, Moscow, Russia

    Boris V. Spitsyn

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© 1995 Springer Science+Business Media Dordrecht

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Novikov, A.P., Shilova, E.A., Buiko, L.D., Zaikov, V.A. (1995). Thermal Stability and Structural Reactions at the Tantalum /a-C Interface under Vacuum Annealing Conditions. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_27

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  • DOI: https://doi.org/10.1007/978-94-011-0173-8_27

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4078-5

  • Online ISBN: 978-94-011-0173-8

  • eBook Packages: Springer Book Archive

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