Abstract
In this paper electrical properties of heterojunction silicon-Al doped DLC were analysed. The Al doped DLC films (DLC:Al) were obtained by the RF decomposition of methane with in situ magnetron sputtering of doping materials. The obtained p-n junction characteristics and TEM observations indicated that aluminium could be introduced into DLC. An inexpensive new method for manufacturing doped-DLC materials on a very large surface is offered. One should underline that this doping method dispenses with the use of poisonous substances.
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Gildenblat, G.Sh., Grot, S., Wronski, C.R., Badzian, A.R., Badzian, T., and Messier, C.R. (1988) Electrical characteristics of Schottky diodes fabricated using plasma-assisted CVD diamond films, Appl. Phys. Lett. 53 (7), 586–588.
Shiomi, H., Nishibayashi, I., and Fujimori, N. (1989) Field-effect transistors using boron-doped diamond epitaxial films, Jap. J. Appl. Phys. 28 L 2, 153–154.
Geis, M.W., Efremov, N.N., and Rathman, D.D. (1988) Device applications of diamonds, in G.H.Johnson, M.Geis and A.Badzian (eds.), Diamond and Diamondlike Material Science and Engineering Study, Materials Research Society, Pittsburgh, PA.
Geis, M.W., Rathman, D.D., Ehrlich, D.J., Murphy, R.A., and Lindley, W.T. (1987) High temperature point contact transistor and Schottky diodes formed on synthetic boron-doped diamond, IEEE Elect. Dev. Lett. EDL-8, 341–343.
Werner, M., Schlichting, V. and Obermeier, E. (1992) Thermistor based on doped polycrystalline diamond thin films, Diamond and Related Materials 1, 669–672.
Tessmer, A.J., Das, K., Dreifus, D.L. (1992) Polycrystalline diamond field-effect transistors, Diamond and Related Materials 1, 89–92.
Fujimori, N., Imai, T., and Doi, A. (1986) Characterization of conducting diamond films, Vacuum 36, 99–102.
Nishimura,K., Das, K., and Glass, J.T. (1991) Material and electric characterization of polycrystalline boron-doped diamond films grown by microwave plasma chemical vapor deposition, J. Appl. Phys. 69, 3142–3148.
Okano, K., Naruki, H., Akiba, Y., Kurosu, T., Iida, M., Hirose Y. and Nakamura, T., (1989) Characterization of boron-doped diamond film, Jpn. J. Appl. Phys. 28, 1066–1071.
Geis, M.W., Efremov, N.N., Woodhouse, J.D. and McAleese, M.D. (1991) Diamond cold cathodes, in Y. Tzeng, M. Yoshikawa, M. Murakawa and A. Feldman (eds.), Applied of Diamond Films and Related Materials, Elsevier Sci. Publ. B.V., Amsterdam, p. 309–310.
Prins, J.F. (1982) Bipolar transistor action in ion implanted diamond, Appl. Phys. Lett. 41, 950–952.
Spear, K. (1989) Diamond -ceramic coating of the future, J. Amer. Ceram. Soc. 72, 171–191.
Meyerson, B., and Smith, F.W. (1980) Chemmical modyfication of the elctrical properties of hydrogenated amorphous carbon films, Solid State Commun. 34, 531–534.
Meyerson, B., and Smith, F.W. (1982) Thermopower of doped semiconducting hydrogenated amorphous carbon films, Solid State Commun. 41, 23–27.
Jones, D.I., and Stewart, A. (1982) Properties of hydrogenated amorphous carbon films and the effects of doping, Philosophical Mag. B46, 423–434.
Dimigen, H., Hubsch, H., and Memming, R. (1987) Tribological and electrical properties of metal-containing hydrogenated carbon films, Appl. Phys. Lett. 50, 1056–1058.
Chen, P.A. (1989) Characteristics of copper-incorporated amorphous carbon film, Thin Solid Films 182, 261–263.
Demichelis, F., Kamiadakis, G., Mpawenayo, P., Perino, M.A., Tagliaferro, A., Tresso, E., Rava, P., Delia Mea, G., and Vallino, M. (1987) Structure and optical properties of hydrogenated amorphous carbon-tin alloys prepared using the sputterassisted plasma chemical deposition technique, Thin Solid Films 150, 189.
Despax, B., Flouttard, J.L. (1989) Synthesis of gold-carbon composites by simultaneous sputtering and plasma polymerization of propane in R.F. capacitively coupled diode system (13.56 MHz), Thin Solid Films 168, 81– 88.
Gerstenberg, K.W., and Grischke, M. (1991) Thermal gas evolution studies on a-C:H:Ta films, J. Appl. Phys. 69, 736 739.
Biederman, H., and Martinu, L. (1990) in R. d’Agostino (ed.), Plasma Deposition, Treatment and Etching of Polymers, Academic Press, Boston, MA, Chapter 4.
Biederman, H., Chudacek, I., Slavinska, D., Martinu, L., David, J., and Nespurek, S. (1989) Physical properties of metal/a-C:H composite, Vacuum 39, 13.
Wrobel, M., Czeremuszkin, G., Szymanowski, H., Szur, H., Klemberg-Sapieha, J.E. and Wetheimer, M.R. (1992) Plasma CVD of iron -containing hydrogenated carbon films, J. Chem. Vapor Deposition 1, 41–58.
Amir, O. and Kalish, R. (1992) Doping of amorphous-hydrogenated carbon films by ion implantation, Diamond and Related Materials 1, 364–368.
Szmidt, J., Olszyna, A., Sokolowska, A., Mitura, S. (1994) In-situ doping of DLC layers, ISCDF-94, Minsk, 2–5 May, Paper No. 5–1.
Has, Z., Mitura, S., Cłapa, M. and Szmidt, J. (1986) Electrical properties of thin carbon films obtained by RF methane decomposition on RF-powered negatively self-biased electrode, Thin Solid Films 136, 161–165.
Mitura, S., Has, Z. and Gorokhovsky, V. (1991) The system for depositing hard diamond-like films onto complex-shaped machine elements in an r.f. arc plasma, Surf. Coatings Technol. 47, 106–112.
Mitura, S. (1992) Radio-frequency hot-filament CVD of diamond, Diamond and Related Materials 1, 239–242.
Staryga, E., Lipinski, A., and Mitura, S. (1986) Electrical conductivity and optical absorption of carbon films produced by RF decomposition of hydrocarbon, Thin Solid Films 145, 17–21.
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© 1995 Springer Science+Business Media Dordrecht
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Mitura, S., Szmidt, J., Sokołowska, A. (1995). Doping of Diamond-Like Carbon Films. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_23
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DOI: https://doi.org/10.1007/978-94-011-0173-8_23
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