Abstract
Recent advances in the ability to generate high mobility diamond films coupled with the development of nanophase diamond materials creates opportunities for advanced diamond electronic device applications. The present paper describes new electronics applications resulting from these innovations which include: diamond nanotechnology, high bandwidth, high power RF switches, and high speed analog to digital electronic circuits.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
6. References
E.O. Johnson, (1965) Physical Limitations on Frequency and Power Parameters of Transistors, RCA Rev., 26, 163–177
R.F. Davis, Z. Sitar, B.E. Williams, H.S. Kong, H.J. Kim, J.W. Palmour, J.A. Edmond, J. Ryu, J.T. Glass, C.H. Carter Jr., (1988) Critical evaluation of the Status of the Areas for Future Research Regarding the Wide Band Gap Semiconductors Diamond, Gallium Nitride, and Silicon Carbide, Materials Science & Engr., B1, 77–104
M.A. Prelas and B.V. Spitsyn, private communication
M.A. Prelas, private communication
X.H. Wang, G.-H.M. Ma, Wei Zhu, J.T. Glass, L. Bergman, K.F. Turner, R.J. Nemanich, (1992) Effects of Boron Doping on the Surface Morphology and Structural Imperfections of Diamond Films, Diamond and Related Materials,1, 828–835
H. Haug and S.W. Koch, (1993) Quantum Theory of the Optical and Electronic Properties of Semiconductors, 2nd Edition, World Scientific, Singapore
S.M. Sze, (1981) Physics of Semiconductor Devices, John Wiley & Sons, New York
E. Betzig and J.K. Trautman, (1992) Near Field Optics: Microscopy, Spectroscopy, and Surface Modification Beyond the Diffraction Limit, Science, 257, 189–195
A.I. Nadezhdinskii and A.M. Prokhorov, (1992) Modern Trends in Diode Laser Spectroscopy, SPIE Vol. 1724: Tunable Diode Laser Applications, 1724, 2–13
J.L. Davidson, (1994) Diamond Electrical Properties and Electronic Device Behavior, in K.E. Spear and J.P. Dismukes (eds), Synthetic Diamond: Emerging CVD Science and Technology, pp. 355–399
see also M.W. Geis, (1991) Diamond Transistor Performance and Fabrication, Proc. IEEE, 79(5), 669–676;
F.J. Himpsel, J.A. Knapp, J.A. VanVechten, D.E. Eastman, (1979) Quantum Photoyield of Diamond (111) A Stable Negative Affinity Emitter, Phys. Rev. B, 20, 624–627
B.B. Pate, (1986) The Diamond Surface: Atomic and Electronic Structure, Surface Sci., 165, 83–142
C.B. Wallace, to be published
A. Rosen and F. Zutavern (1994) High-Power Optically Activated Solid State Switches, Artech House, Boston
P.T. Ho, J. Goldhar, (1994) Photoconductive Switching Using Diamond and Zinc Selenide, in A. Rosen and F. Zutavern (eds), High-Power Optically Activated Solid State Switches, pp. 81–93, Artech House, Boston
J. Pozhela, (1981) Plasma and Current Instabilities in Semiconductors,Pergammon, Oxford
R.C. Davidson, (1990) Physics of Noneutral Plasmas, Addison-Wesley, Redwood City, CA
S. Badnyopadhyay, G.H. Berstein, W. Porod, (1989) Quantum Devices Based on Phase Coherent Lateral Quantum Transport, in M.A. Reed and W.P. Kirk (eds), Nanostructure Physics and Fabrication, pp. 183–188, Academic Press, Boston
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1995 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Wallace, C.B. (1995). Advanced Applications of Diamond Electronics. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_20
Download citation
DOI: https://doi.org/10.1007/978-94-011-0173-8_20
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-4078-5
Online ISBN: 978-94-011-0173-8
eBook Packages: Springer Book Archive