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Calculations of Phosphorous Electronic Levels in Diamond

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Book cover Wide Band Gap Electronic Materials

Part of the book series: NATO ASI Series ((ASHT,volume 1))

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Abstract

The present paper is dedicated to the simulation of phosphorus entering into diamond and its influence upon the vacancy in diamond, using the theory of shallow donor states and the tight-binding theory (TBT).

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References

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Author information

Authors and Affiliations

  1. Research Group of Diamond Electronics and Coatings, Donbass Institute of Constructions Engineering of, 339023, Makeyevka, Ukraine

    Valentine V. Tokiy & Diana L. Savina

Authors
  1. Valentine V. Tokiy
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  2. Diana L. Savina
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Editor information

Editors and Affiliations

  1. University of Missouri-Columbia, Columbia, Missouri, USA

    Mark A. Prelas  & Tina Stacy  & 

  2. Florida A&M University/Florida State University, Tallahassee, Florida, USA

    Peter Gielisse

  3. Rockford Diamond Technology, Inc., Columbia, Missouri, USA

    Galina Popovici

  4. Russian Academy of Sciences, Moscow, Russia

    Boris V. Spitsyn

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© 1995 Springer Science+Business Media Dordrecht

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Tokiy, V.V., Savina, D.L. (1995). Calculations of Phosphorous Electronic Levels in Diamond. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_10

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  • DOI: https://doi.org/10.1007/978-94-011-0173-8_10

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4078-5

  • Online ISBN: 978-94-011-0173-8

  • eBook Packages: Springer Book Archive

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