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Wide Band Gap Electronic Materials pp 1–13Cite as

Problems of n-type Diamond Doping. Forced Methods of Doping

A review

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Part of the book series: NATO ASI Series ((ASHT,volume 1))

Abstract

The experimental and theoretical results on would-be donor impurities in diamond lattice: N, P, Li, and Na, are reviewed. New methods of forced diffusion and ion assisted doping during growth are discussed. Experimental data on n-type conductivity obtained by forced diffusion into the diamond CVD films are also presented.

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Author information

Authors and Affiliations

  1. Rockford Diamond Technology, 501 S. Sixth Street, Champaign, IL, 61820-5579, USA

    Galina Popovici

  2. Nuclear Engineering Department, University of Missouri - Columbia, Columbia, MO, 65211, USA

    Galina Popovici & M. A. Prelas

Authors
  1. Galina Popovici
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  2. M. A. Prelas
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Editor information

Editors and Affiliations

  1. University of Missouri-Columbia, Columbia, Missouri, USA

    Mark A. Prelas  & Tina Stacy  & 

  2. Florida A&M University/Florida State University, Tallahassee, Florida, USA

    Peter Gielisse

  3. Rockford Diamond Technology, Inc., Columbia, Missouri, USA

    Galina Popovici

  4. Russian Academy of Sciences, Moscow, Russia

    Boris V. Spitsyn

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© 1995 Springer Science+Business Media Dordrecht

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Popovici, G., Prelas, M.A. (1995). Problems of n-type Diamond Doping. Forced Methods of Doping. In: Prelas, M.A., Gielisse, P., Popovici, G., Spitsyn, B.V., Stacy, T. (eds) Wide Band Gap Electronic Materials. NATO ASI Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0173-8_1

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  • DOI: https://doi.org/10.1007/978-94-011-0173-8_1

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4078-5

  • Online ISBN: 978-94-011-0173-8

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