Abstract
When the gate length of the pseudomorphic HEMTs (PsHEMTs) approaches 0.1 μm, short channel effects become limiting factor for the device performance, leading to a large negative threshold voltage shift, increase in the output conductance, degradation and subthreshold slope reduction. Most of the authors attribute the short-channel effects in HEMTs mainly to the de-confinement of the channel carriers [1]. The proposed solution is enhancement of the confining step potential below die channel together with a reduction of the distance between the gate and the channel in order to preserve a large aspect ratio.
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References
Kizilyalli, I.C. at al.(1993) Scaling properties and short-channel effects in submicrometer AlGaAs/GaAs MODFET’s: A Monte Carlo study, IEEE Trans. Electron Dev., 40, 234–249.
Asenov A. at al. (1993) Finite element simulation of recess gate MESFETs and HEMTs: The simulator H2F, in Simulation of Semiconductor Devices and Processes, eds. S. Selberherr, H. Stippel, E. Strasser, Springer Verlag, Wien, 5, 265–268.
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© 1995 Springer Science+Business Media Dordrecht
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Asenov, A., Cameron, N.I., Taylor, M.R.S., Holland, M., Beaumont, S.P. (1995). Fabrication and Simulation of 0.1 μm Pseudomorphic HEMTs. In: Balkanski, M., Yanchev, I. (eds) Fabrication, Properties and Applications of Low-Dimensional Semiconductors. NATO ASI Series, vol 3. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0089-2_4
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DOI: https://doi.org/10.1007/978-94-011-0089-2_4
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-4043-3
Online ISBN: 978-94-011-0089-2
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