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Grating Assisted Electromagnetic Emission from Magneto-Plasmon and Cyclotron Modes in Two-Dimensional Plasma Layer on GaAs

A Rigorous Theory

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Fabrication, Properties and Applications of Low-Dimensional Semiconductors

Part of the book series: NATO ASI Series ((ASHT,volume 3))

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Abstract

In our paper [1], the spectrum of electromagnetic (EM) radiation from two-dimensional (2D) plasmons in GaAs/AIGaAs heterostructure with metal grating coupler was calculated in a strict EM approach. Using this approach, the full 2D plasmon resonance linewidth observed in experiments [2] was explained in [1] with plasmon radiative decay, 2D electron scattering, and dielectric losses in the heterostructure layers taken into consideration. It was shown in [1] that for the characteristic parameters of experiment [2] the plasmon radiative decay linewidth is two orders of magnitude larger than expected from the perturbation theory [3] and is roughly of the same value as the dissipative electron damping calculated with using the experimental value of electron scattering time.

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References

  1. Matov, O.R., Polischuk, O.V., and Popov, V.V. (1993) Electromagnetic emission from two-dimensional plasmons in a semiconductor-dielectric structure with metal grating: Rigorous theory, Int. J. Infrared and Millimeter Waves 14, 1455–1470.

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  2. Batke, E., Heitmann, D., and Tu, C.W. (1986) Plasmon and magnetoplasmon excitation in two-dimensional electron space-charge layers on GaAs, Phys. Rev. B34, 6951–6960.

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  3. Chaplik, A.V. (1985) Absorption and emission of electromagnetic waves by two-dimensional plasmons, Surface Science Reports 5, 289–336.

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  4. Kotthaus, J.P., Hansen, W., Pohlmann, H., Wassermeier, M., and Ploog, K. (1988) Intersubband resonances in quasi-one-dimensional channels, Surface Science 196, 600–610.

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© 1995 Springer Science+Business Media Dordrecht

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Matov, O.R., Meshkov, O.F., Polischuk, O.V., Popov, V.V. (1995). Grating Assisted Electromagnetic Emission from Magneto-Plasmon and Cyclotron Modes in Two-Dimensional Plasma Layer on GaAs. In: Balkanski, M., Yanchev, I. (eds) Fabrication, Properties and Applications of Low-Dimensional Semiconductors. NATO ASI Series, vol 3. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0089-2_21

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  • DOI: https://doi.org/10.1007/978-94-011-0089-2_21

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4043-3

  • Online ISBN: 978-94-011-0089-2

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