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Hot Hole p-Ge Lasers and Masers for Spectroscopy of MultiQuantum-Well Heterostructures Ge/Ge1-xSix

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Fabrication, Properties and Applications of Low-Dimensional Semiconductors

Part of the book series: NATO ASI Series ((ASHT,volume 3))

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Abstract

Hot hole p-Ge masers and lasers operating in millimiter and far IR ranges (up to 100 μm) belong to a new group of tunable semiconductor generators discovered in the early ’80s(1). They are proposed to be used in solid state spectroscopy since their discovery. These generators may be preferable to other sources of the same frequency since it is possible to set the sourcer of radiation near by the sample and provide ultralow background radiation conditions in low temperature experiments.The performance of the tunable spectrometer with hote hole p-Ge emitter is demostrated by its application to studies of cyclotron resonance in strained multi-quantum-well (MQW) heterostructures (HS) Ge/Ge0.87Si0 13 and investigations of shallow impurities in these heterostructures.

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References

  1. Special Issue on Far-Infrared Semiconductor Lasers, (1991), Opt.Quantum Electronics, 23, N 2.

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  2. L.K. Orlov et al. (1990), Hall effect and Characteristics of the energy band structure of selectively doped Ge-GeSi superlattices., Sov.Phys. JETP, 71, 573–576

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  3. V.I. Gavrilenko et al. (1994), Cyclotron resonance in Ge layers in Ge1-xGex-Ge strained heterostructures. Jpn.J. Appl. Phys. 33, 2386–2387.

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© 1995 Springer Science+Business Media Dordrecht

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Nikonorov, V.V., Gavrilenko, V.I., Kozlov, I.N., Moldavskaya, M.D., Kuznetsov, O.A., Erofeeva, I.V. (1995). Hot Hole p-Ge Lasers and Masers for Spectroscopy of MultiQuantum-Well Heterostructures Ge/Ge1-xSix . In: Balkanski, M., Yanchev, I. (eds) Fabrication, Properties and Applications of Low-Dimensional Semiconductors. NATO ASI Series, vol 3. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0089-2_15

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  • DOI: https://doi.org/10.1007/978-94-011-0089-2_15

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4043-3

  • Online ISBN: 978-94-011-0089-2

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