Abstract
We have used transfer matrices to calculate the energy levels of confined and unconfined states in a semiconductor heterostructure with strain. The heterostructure consists of a mulitple quantum well (MQW) structure on top of a thick buffer layer. The transfer matrices are deduced from the conditions for smooth joining of the envelope wavefunctions1 φ, for an electron in a piece-wise constant potential. From the transfer matrices we can easily calculate φ for the whole heterostructure.
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References
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© 1995 Springer Science+Business Media Dordrecht
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Worren, T., Ozanyan, K., Hunderi, O. (1995). Transfer Matrix Based Calculations of Energy Levels in Strained Ingaas/Gaas Multiple Quantum Wells. In: Balkanski, M., Yanchev, I. (eds) Fabrication, Properties and Applications of Low-Dimensional Semiconductors. NATO ASI Series, vol 3. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0089-2_12
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DOI: https://doi.org/10.1007/978-94-011-0089-2_12
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-4043-3
Online ISBN: 978-94-011-0089-2
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