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EXCITONS, LOCALIZED STATES IN SILICON DIOXIDE AND RELATED CRYSTALS AND GLASSES

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Defects in SiO2 and Related Dielectrics: Science and Technology

Part of the book series: NATO Science Series ((NAII,volume 2))

Abstract

The excitons, localized states in crystalline and glassy silicon dioxide, germanium dioxide were studied by photoluminescent and photoelectric experimental methods. Results were compared with analogous investigations of related crystals, such as aluminum and gallium orthophosphates, and of related glasses, such as silica, sodium silicates, germanates, lead and phosphates glasses. Special attention was made to the influence of oxygen deficiency on localized states of glasses, in general, and to the nature of the 7.6 eV band in reduced silica, in particular.

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Authors and Affiliations

  1. Solid State Physics Institute, University of Latvia, 8 Kengaraga St., LV-1063, Riga, Latvia

    A. N. Trukhin

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  1. A. N. Trukhin
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Editors and Affiliations

  1. Dipartimento di Scienza dei Materiali, Università Milano-Bicocca, Milano, Italy

    G. Pacchioni

  2. Institute of Solid State Physics, University of Latvia, Riga, Latvia

    L. Skuja

  3. Naval Research Laboratory, Washington DC, USA

    D. L. Griscom

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Trukhin, A.N. (2000). EXCITONS, LOCALIZED STATES IN SILICON DIOXIDE AND RELATED CRYSTALS AND GLASSES. In: Pacchioni, G., Skuja, L., Griscom, D.L. (eds) Defects in SiO2 and Related Dielectrics: Science and Technology. NATO Science Series, vol 2. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0944-7_8

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  • DOI: https://doi.org/10.1007/978-94-010-0944-7_8

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