Abstract
Several oxide single crystals, namely CLBO, NY AB, mixed titanium sillenites, and KGW:Nd, were grown from high temperature solutions. The crystallization was carried out in multi-zone resistance furnaces in which temperature could be changed at the rates as slow as 0.01K/h due to the use of Eurotherm 906S programmers. The multi-zone construction enabled to shape the temperature gradients in a very broad range. It was shown that temperature gradients strongly influence the habit of the growing crystals. By changing the temperature gradients it was possible to decrease the number of crystallographic planes forming the interface in sillenite single crystals from nine to only one dominating plane. Growth under conditions of natural and forced convection has been observed in case of sillenite crystals. It was found that natural convection stimulated the formation of a core, enriched in dopants, in the central part of the growing crystals. The transition from the natural to forced convection did not change the shape of the interface, but removed the core and gave more uniform crystals.
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© 2000 Springer Science+Business Media Dordrecht
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Majchrowski, A. (2000). High Temperature Solution Growth of Oxide Single Crystals for Optoelectronics. In: Cloots, R., Ausloos, M., Pekala, M., Hurd, A.J., Vacquier, G. (eds) Supermaterials. NATO Science Series, vol 8. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0912-6_10
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DOI: https://doi.org/10.1007/978-94-010-0912-6_10
Publisher Name: Springer, Dordrecht
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