Abstract
Silicon is by far the dominant material in today’s microelectronics, its low dimensional structure constitutes also one of the most fascinating fields of research in materials science and technology. Quantum size effects, which occur when crystallite sizes go below ≃ 5nm and become comparable to the exciton Bohr radius, are at the origin of material properties, which find interesting applications in new types of devices. Single electron transistors and memories constitute one of such families, based on the well known Coulomb blockade effect. Light emitting devices (LEDs) and displays, based on quantum confinement, constitute another area of primary importance in technological applications. The main reason being the inefficiency of bulk silicon to emit light and the lack of C-MOS compatible efficient light emitters for integrated optoelectronics.
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Nassiopoulou, A.G., Ouisse, T., Photopoulos, P. (2000). Silicon Nanostructures in Si/SiO2 Superlattices for Light Emission Applications: Possibilities and Limits. In: Pavesi, L., Buzaneva, E. (eds) Frontiers of Nano-Optoelectronic Systems. NATO Science Series, vol 6. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0890-7_9
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DOI: https://doi.org/10.1007/978-94-010-0890-7_9
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