Abstract
Starting with Canham’s discovery in 1990 that porous silicon (PSi) can emit bright light in the visible range of the spectrum, there has been a strong interest in silicon light emitters. PSi and other light-emitting forms of silicon contain nanostructures or crystallites in the nanometer size range. Throughout most of the 1990’s, the intense visible luminescence from nanoscale silicon crystallites has been a source of numerous investigations and considerable debate. Today, most of the controversies have been put to rest. However, much less has been written about nanoscale Si light-emitting devices, in part because some of their characteristics are less than ideal and not well understood. This paper reviews the status of nanoscale silicon light emitters. It starts with a survey of the manufacturing methods used to produce nanoscale Si. Next, key physical, optical, electrical, and structural properties of nanoscale Si are examined. The fabrication of electroluminescent devices (LEDs) is then discussed. We focus on the stability, efficiency, speed, and spectral characteristics of nanoscale Si light emitters. Recent results obtained on microcavity PSi LEDs and 1.5μm LEDs produced by doping PSi with erbium are discussed. Finally, the integration of PSi LEDs with microelectronic circuitry is reported and the prospects for practical devices are briefly examined.
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References
C.F. Klingshim, Semiconductor Optics (Springer, Berlin, 1995)
D.J. Lockwood, Light Emission in Silicon: From Physics to Devices, Semiconductors and Semimetals, Vol. 49 (Academic Press, San Diego, 1998)
L.T. Canham, Appl. Phys. Lett. 57, 1046 (1990)
K.A. Littau, P.J. Szajowski, A.J. Miller, A.R. Kortan, and L.E. Brus, J. Phys. Chem. 97, 1224 (1993)
P. M. Fauchet, L. Tsybeskov, C. Peng, S. P. Duttagupta, J. von Behren, Y. Kostoulas, J. V. Vandyshev, and K. D. Hirschman, IEEE Jour. Selected Topics in Quantum Electron. 1, 1126–1139 (1995)
P.M. Fauchet, J. Luminesc. 70, 294 (1996)
R.T. Collins, P.M. Fauchet, and M.A. Tischler, Physics Today 50, 24 (January 1997)
A.G. Cullis, L.T. Canham, and P.D.J. Calcott, J. Appl. Phys. 82, 909 (1997)
P. M. Fauchet, in Light Emission in Silicon: From Physics to Devices, D.J. Lockwood editor, Semiconductors and Semimetals, Vol. 49 (Academic Press, San Diego, 1998), pp 206–252
L.T. Canham, ed., Properties of Porous Silicon, Electronic Materials Information Service Datareviews Series No 18 (INSPEC, The Institution of Electrical Engineers, London, UK, 1997)
P.M. Fauchet, J. von Behren, K.D. Hirschman, L. Tsybeskov, and S.P. Duttagupta, Phys. Stat. Sol. (a) 165, 3(1998).
A. Uhlir, Jr., Bell Syst. Tech. J. 35, 333 (1956)
R.L. Smith and S.D. Collins, J. Appl. Phys. 71, R1 (1992)
P. M. Fauchet, in Pits and Pores: Formation, Properties, and Significance for Advanced Luminescent Materials, edited by P. Schmuki, D. J. Lockwood, H. Isaacs, and A. Bsiesy (The Electrochemical Society, Pennington, NJ, 1997), pp 27–60
P.M. Fauchet and J. von Behren, Phys. Stat. Sol. (b) 204, R7 (1997)
L.T. Canham, A.G. Cullis, C. Pickering, O.D. Dosser, T.I. Cox, and T.P. Lynch, Nature 368, 133 (1994)
J. von Behren, E.H. Chimowitz, and P.M. Fauchet, Adv. Mater. 9, 921 (1997)
P.M. Fauchet, L. Tsybeskov, S.P. Duttagupta, and K.D. Hirschman, Thin Solid Films 297, 254 (1997)
L. Canham, MRS Bulletin 18, 22 (July 1993)
L. Tsybeskov, S.P. Duttagupta, K.D. Hirschman, and P.M. Fauchet, in Advanced Luminescent Materials, D.J. Lockwood, P.M. Fauchet, N. Koshida, and S.R.J. Brueck, editors (The Electrochemical Society, Pennington, NJ, 1996), pp 34–47
L. Tsybeskov, S.P. Duttagupta, K.D. Hirschman, and P.M. Fauchet, Appl. Phys. Lett. 68, 2058 (1996)
M. Warntjes, C. Vieillard, F. Ozanam, and J.N. Chazalviel, J. Electrochem. Soc. 142, 4138 (1995)
J.M. Buriak and M.J. Allen, J. Am. Chem. Soc. 120, 1339 (1998)
J. von Behren, T. van Buuren, M. Zacharias, E.H. Chimowitz, and P.M. Fauchet, Solid State Commun. 105, 317(1998)
V. Lehmann and U. Gosele, Appl. Phys. Lett. 58, 856 (1991)
P.D.J. Calcott, K.J. Nash, L.T. Canham, M.J. Kane, and D. Brumhead, J. Phys.: Condensed Matter 5, L91 (1993)
J. von Behren, Y. Kostoulas, K. B. Ucer, and P. M. Fauchet, J. Non-Cryst. Solids 198-200, 957 (1996)
L. Tsybeskov, K.L. Moore, D.G. Hall, and P.M. Fauchet, Phys. Rev. B 54, R8361 (1996)
C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B 48, 11024 (1993)
S. Prokes, Appl. Phys. Lett. 62, 3244 (1993)
F. Koch, V. Petrova-Koch, and T. Muschik, J. Lumin. 57, 271 (1993)
G. Allan, C. Delerue, and M. Lannoo, Phys. Rev. Lett. 76, 2961 (1996)
H. Mizuno, H. Koyama, and N. Koshida, Appl. Phys. Lett. 69, 3779 (1996)
M. V. Wolkin, J. Jörne, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. 82, 197 (1999).
L. Tsybeskov, S.P. Duttagupta, K.D. Hirschman, P.M. Fauchet, K.L. Moore, and D.G. Hall, Appl. Phys. Lett. 70, 1790(1997)
L. Tsybeskov, Ju.V. Vandyshev, and P.M. Fauchet, Phys. Rev. B 49, 7821 (1994)
R.E. Hummel, A. Morrone, M. Ludwig, and S.S. Chang, Appl. Phys. Lett. 63, 271 (1993)
A.G. Nassiopoulos, S. Grigoropoulos, D. Papadimitriou, and E. Gogolides, Phys. Stst, Sol. (b) 190, 91 (1995)
S.H. Zaidi, A.-S. Chu, and S.R.J. Brueck, Mat. Res. Soc. Symp. Proc. 358, 957 (1995)
H. Tamura, M. Ruckschloss, T. Wirschem, and S. Veprek, Appl. Phys. Lett. 65, 1537 (1994)
V. Petrova-Koch, T. Fischer, K. Sheglov, and F. Koch, in Advanced Luminescent Materials, D.J. Lockwood, P.M. Fauchet, N. Koshida, and S.R.J. Brueck, editors (The Electrochemical Society, Pennington, NJ, 1996), pp 382–392
L. Tsybeskov, K.D. Hirschman, S.P. Duttagupta, P.M. Fauchet, M. Zacharias, P. Kohlert, J.P. McCaffrey, and D.J. Lockwood, in Quantum Confinement: Nanoscale Materials, Devices, and Systems, edited by M. Cahay, J.P. Leburton, D.J. Lockwood, and S. Bandyopadhyay (The Electrochemical Society, Pennington, NJ, 1997), pp 134–145
L. Tsybeskov, K.D. Hirschman, S.P. Duttagupta, M. Zacharias, P.M. Fauchet, J. McCaffrey, and D.J. Lockwood, Appl. Phys. Lett. 72, 43 (1998)
L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, P. M. Fauchet, M. Zacharias, J. P. McCaffrey, and D. J. Lockwood, Phys. Stat. Sol. (a) 165, 69 (1998)
A. Halimaoui, C. Oules, G. Bomchil, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, and F. Muller, Appl. Phys. Lett. 59, 304(1991)
A. Richter, P. Steiner, F. Kozlowski, and W. Lang, IEEE Electron Device Lett. 12, 691 (1991)
N.M. Kalkhoran, F. Namavar, and H.P. Maruska, Mat. Res. Soc. Symp. Proc. 256, 84 (1992)
E. Bassous, M. Freeman, J.-M. Halbout, S.S. Iyer, V.P. Kesan, P. Munguia, S.F. Pesarcik, and B.L. Williams, Mat. Res. Soc. Symp. Proc. 256, 23 (1992)
N. Koshida and H. Koyama, Appl, Phys. Lett. 60, 347 (1992)
A. Bsiesy, F. Muller, M. Ligeon, F. Gaspard, R. Herino, R. Romestain, and J.-C. Vial, Phys. Rev. Lett. 71, 637(1993)
N. Koshida, H. Koyama, Y. Yamamoto, and G.J. Collins, Appl. Phys. Lett. 63, 2655 (1993)
C. Peng, K.D. Hirschman, and P.M. Fauchet, J. Appl. Phys. 80, 295 (1996)
M. Ben-Chorin, in Properties of Porous Silicon, Electronic Materials Information Service Datareviews Series No 18 (INSPEC, The Institution of Electrical Engineers, London, UK, 1997), pp 165–175
A. Loni, A.J. Simons, T.I. Cox, P.D.J. Calcott, and L.T. Canham, Electron. Lett, 31, 1288 (1995)
L. Tsybeskov, S.P. Duttagupta, K.D. Hirschman, and P.M. Fauchet, in Advanced Luminescent Materials, edited by D.J. Lockwood, P.M. Fauchet, N. Koshida, and S.R.J. Brueck (The Electrochemical Society, Pennington, NJ, 1996), pp 34–47
L. Tsybeskov, S.P. Duttagupta, K.D, Hirschman, and P.M. Fauchet, Appl. Phys. Lett. 68, 2058 (1996)
J. Linnros and N. Lalic, Appl. Phys. Lett. 66, 3048 (1995)
A.J. Simons, T.I. Cox, A. Loni, L.T. Canham, M.J. Uren, C. Reeves, A.G. Cullis, P.D.J. Calcott, M.R. Houghton, and J.P. Newey, in Advanced Luminescent Materials, edited by D.J. Lockwood, P.M. Fauchet, N. Koshida, and S.R.J. Brueck (The Electrochemical Society, Pennington, NJ, 1996), pp 73–86.
B. Gelloz, T. Nakagawa, and N. Koshida, Appl. Phys. Lett. 73, 2021 (1998)
C. Peng and P.M. Fauchet, Appl. Phys. Lett. 67, 2515 (1995)
S. Lazarouk, P. Jaguiro, S. Katsouba, G. Masini, S. La Monica, G. Maiello, and A, Ferrari, Appl. Phys. Lett. 68, 1646(1996)
J. Wang, F.-L. Zhang, W.-C. Wang, J.-B. Zheng, X.-Y. Hou, and X. Wang, J. Appl. Phys. 75, 1070 (1994)
P. Steiner, F. Kozlowski, H. Sandmaier, and W. Lang, Mat. Res. Soc. Symp, Proc. 283, 343 (1993)
L. Tsybeskov, K.L. Moore, S.P. Duttagupta, K.D. Hirschman, D.G. Hall, and P.M. Fauchet, Appl. Phys. Lett. 69, 3411 (1996)
M. G. Berger, M. Thönissen, R. Arens-Fischer, H. Münder, H. Lüth, M. Arntzen, and W. Theiß, Thin Solid Films 255, 313(1995)
M. G. Berger, C. Dieker, M. Thönissen, L. Vescan, H. Liith, H. Münder, M. Wernke, and P. Grosse, J. Phys. D: Appl. Phys. 27, 1333 (1994)
S. Frohnhoff and M. G. Berger, Adv. Mater. 6, 963 (1994)
L. Pavesi, La Rivista del Nuovo Cimento 20, 1 (1997)
W. Theiβ, Surface Science Reports 29, 91 (1997)
S. Chan, L. Tsybeskov, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 536, 117 (1999)
C. Peng and P. M. Fauchet, Appl. Phys. Lett. 67, 2515 (1995)
S. Chan and P. M. Fauchet, in Silicon-based Optoelectronics, edited by D. C. Houghton and E. A. Fitzgerald, SPIE Proc. 3630, 144 (1999)
M. Araki, H. Koyama, and N. Koshida, Appl. Phys. Lett. 69, 2956 (1996)
L. Pavesi, C. Mazzoleni, A. Tredicucci, and V. Pellegrini, Appl. Phys. Lett. 67, 3280 (1995)
A. Tredicucci, Y. Chen, V. Pellegrini, and C. Departs, Appl. Phys. Lett. 66, 2388 (1995)
H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, Appl. Phys. Lett. 43, 943 (1983)
S. Coffa, F. Priolo, G. Franzo, V. Bellani, A. Camera, and C. Spinella, Phys. Rev. B 48, 11782 (1993)
H. Ennen, U. Kaufmann, G. Pomrenke, J. Schneider, J. Windscheif, and A. Axmann, J. Cryst. Growth 64, 165(1983)
A. Polman, J. Appl. Phys. 82, 1 (1997)
F. Namavar, F. Lu, C. H. Perry, A. Cremins, N. M. Kalkhoran, J. T. Daly, and R. A. Soref, Mat. Res. Soc. Symp. Proc. 358, 375 (1995)
A. M. Dorofeev, N. V. Gaponenko, V. P. Bondarenko, E. E. Bachilo, N. M. Kazuchits, A. A. Leshok, G. N. Tryanova, N. N. Vorosov, V. E. Borisenko, H. Gnaser, W. Bock, P. Becker, and H. Oechsner, J. Appl. Phys. 77, 2679 (1995)
H. A. Lopez, X. L. Chen, S. A. Jenekhe, and P. M. Fauchet, J. Lumin. 80, 115 (1999)
T. Kimura, A. Yokoi, H. Horiguchi, R. Saito, T. Ikoma, and A. Sato, Appl. Phys. Lett. 65, 983 (1994)
H. A. Lopez, S. Chan, L. Tsybeskov, H. Koyama, V. P. Bondarenko, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 536, 135 (1999)
L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman, P. M. Fauchet, K. L. Moore, and D. G. Hall, Appl. Phys. Lett. 70, 1790 (1997)
H. A. Lopez and P. M. Fauchet, Appl. Phys. Lett. 75, 3989 (1999)
S. Coffa, G. Franzo, and F. Priolo, MRS Bulletin 23(4), 25 (1998)
S. Coffa, G. Franzo, F. Priolo, A. Pacelli, and A. Lacaita, Appl. Phys. Lett. 73, 93 (1998)
H. Isshiki, H. Kobayashi, S. Yugo, T. Kimura, and T. Ikoma, Appl. Phys. Lett. 58, 484 (1991)
E. Ettedgui, C. Peng, L. Tsybeskov, Y. Gao, P.M. Fauchet, H.A. Mizes, and G.A. Carver, Mat. Res. Soc. Symp. Proc. 283, 173 (1993)
S.P. Duttagupta, P.M. Fauchet, C. Peng, S.K. Kurinec, K. Hirschman, and T.N. Blanton, Mat. Res. Soc. Symp. Proc. 358, 647 (1995)
S.P. Duttagupta, C. Peng, L. Tsybeskov, and P.M. Fauchet, Mat. Res. Soc. Symp. Proc. 380, 73 (1995)
P. Schmuki, L.E. Erickson, and DJ. Lockwood, Phys. Rev. Lett. 80, 4060 (1998)
K.D. Hirschman, L. Tsybeskov, S.P. Duttagupta, and P.M. Fauchet, Nature 384, 338 (1996)
K. D. Hirschman, Ph.D. Thesis, University of Rochester, April 2000
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Fauchet, P.M., Chan, S., Lopez, H.A., Hirschman, K.D. (2000). Silicon Light Emitters: Preparation, Properties, Limitations, and Integration with Microelectronic Circuitry. In: Pavesi, L., Buzaneva, E. (eds) Frontiers of Nano-Optoelectronic Systems. NATO Science Series, vol 6. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0890-7_7
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