Quantum Wires and Quantum Dots for Optoelectronics: Recent Advances with Epitaxial Growth on Nonplanar Substrates
The lateral quantum confinement imposed on electrons and holes in semiconductor quantum wires (QWRs) and quantum dots (QDs) has been predicted to bring about significant advantages for optoelectronic device applications. Early on, the increasingly sharp density of states (DOS) achieved with more degrees of confinement was expected to dramatically enhance optical absorption and emission due to the spectral confinement of the reduced DOS. Furthermore, it was anticipated that the lateral confinement would increase the exciton binding energy beyond what is obtained with two-dimensional (2D) quantum well (QW) structures, giving rise to enhanced linear and nonlinear optical excitonic effects. In addition, the extremely small number of charge carriers residing in short wire segments or small arrays of dots makes these nano-optoelectronic structures suitable for integration with novel electronic devices inherently designed for low power consumption, such as conducting nanowires and single electron transistors.
KeywordsEntropy Anisotropy Recombination Coherence GaAs
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