Abstract
Since the proposal and the demonstration of carrier tunneling in III/V semiconductor heterostructures, there has been a considerable and persistent interest in these phenomena [1,2]. One motivation is the investigation of fundamental physical principles of quantum tunneling, and in a detailed description in the case of its realisations using semiconductor materials. This has direct relevance for the understanding and improvement of related systems, e.g., the intersubband infrared lasers also called quantum cascade lasers [3]. On the other side there are perspectives for application of semiconductor tunneling structures in a variety of practical electronics devices including ultrahigh- speed devices oscillators [4], multi-valued logic switches [5], fast A/D converters [6] and special purpose light-emitting diodes [7–9]. The highly nonlinear I–V characteristics with eventual negative differential resistance (NDR) is an essential ingredient for most of the proposed applications.
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Goovaerts, E., Van Hoof, C. (2000). Optical Spectroscopy of Carrier Relaxation and Transport in III/V Semiconductor Tunneling Structures. In: Pavesi, L., Buzaneva, E. (eds) Frontiers of Nano-Optoelectronic Systems. NATO Science Series, vol 6. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0890-7_24
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DOI: https://doi.org/10.1007/978-94-010-0890-7_24
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