Abstract
Following Canham’s report of visible photoluminescence (PL) from porous silicon,1 the optical and electronic properties of nano-structures made from silicon (Si) or germanium (Ge) have attracted much attention, because they open a new possibility for photonic applications by the use of group-IV elements. In particular, PL properties of Si nanocrystals (nc-Si) have been widely studied and the relationship between the size of nc-Si and the PL peak energy has been revealed experimentally for at least red and near-infrared (NIR) PL.2–4 According to these reports, nc-Si with about 4 nm in diameter exhibits a PL peak at about 1.4 eV. As the size decreases further, the PL peak shifts to higher energies and reaches the visible region for nc-Si smaller than 2 nm. In contrast to nc-Si, there have been few reports on the size dependence of the PL spectra for Ge nanocrystals (nc-Ge). The nc-Ge has been prepared by several methods and these samples exhibit strong visible PL at about 2.2 eV independent of the size of nc-Ge (2–15 nm) and the preparation methods.5–11
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References
Canham, L. T. (1990) Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl. Phys. Lett. 57, 1046–1048.
Takagi, H., Ogawa, H., Yamazaki, Y. Ishizaki, A,, and Nakagiri, T. (1990) Quantum size effects on photoluminescene in ultrafine Si particles. Appl. Phys. Lett. 56, 2379–2380.
Schuppler, S., Friedeman, S. L., Marcus, M. A., Adler, D. L., Xie, Y.-H, Ross, F. M., Chabal, Y. J., Harris, T. D., Brus, L. E., Brown, W. L., Chaban, E. E., Szajowski, P. F., Christman, S. B., and Citrin, P. H. (1995) Size, shape, and composition of luminescent species in oxidized Si nanocrystais and H-passivated porous Si. Phys. Rev. B 52, 4910–4925.
Kanzawa, Y, Kageyama, T., Takeoka, S. Fujii, M., Hayashi, S., and Yamamoto, K. (1997) Size-dependent near-infrared photoluminescence spectra of Si nanocrystais embedded in SiO2 matrices. Solid Stale Commun. 102, 533–537.
Maeda, Y. (1995) Visible photoluminescence from nanocrystallite Ge embedded in a glassy SiO2 matrix: evidence in support of the quantum-confinement mechanism. Phys. Rev. B 51, 1658–1670
Okamoto, S. and Kanemitsu, Y, (1996) Photoluminescence properties of surface-oxidized Ge nanocrystais: Surface localization of excitons. Phys. Rev. B 54, 16421–16424.
Paine, D. C., Caragianis, C., Kim, T, Y., Shigesato, Y., and Ishahara, T. (1993) Visible photoluminescence from nanocrystalline Ge formed by H2 reduction of Si0.6Ge0.4O2. Appl. Phys. Lett. 62, 2842–2844.
Dutta, A. K. (1996) Visible photoluminescence from Ge nanocrystal embedded into a SiO2 matrix fabricated by atmospheric pressure chemical vapor deposition. Appl. Phys. Lett. 68, 1189–1191.
Nogami, M. and Abe, Y, (1994) Sol-gel method for synthesizing visible photoluminescent nanosized Ge-crystal-doped silica glasses. Appl. Phys. Lett. 65, 2545–2547.
Saito, A. and Suemoto, T. (1997) Luminescence in selectively excited germanium microcrystallites. Phys. Rev. B 56, R1688–R1691.
Craciun, V., Leborgne, C. B., Nicholls, E. J., and Boyd, I. W. (1996) Light emission from germanium nanoparticles formed by ultraviolet assisted oxidation of silicon-germanium. Appl. Phys. Lett. 69, 1506–1508.
Negishi, Y., Kawamata, H., Hayakawa, F., Nakajima, A., and Kaya, K. (1998) The infrared HOMO-LUMO gap of germanium clusters. Chem. Phys. Lett. 294, 370–376.
Negishi, Y., Nakamura, Y., Nagao, S., Nakajima, A., Kamei, S., and Kaya, K. Visible photoluminescence of the deposited germanium-oxide prepared from clusters in the gas phase, submitted to J. Appl. Phys.
Takeoka, S., Fujii, M,, Hayashi, S, and Yamamoto, K. (1998) Size-dependent near-infrared photoluminescence from Ge nanocrystais embedded in SiO2 matrices. Phys. Rev. B 58, 7921–7925.
Negishi, Y., Kawamata, H., Hayase, T., Gomei, M., Kishi, R., Hayakawa, F., Nakajima, A., and Kaya, K. (1997) Photoelectron spectroscopy of germanium-fluorine binary cluster anions: the HOMO-LUMO gap estimation of Gen clusters. Chem. Phys. Lett. 269, 199–207.
Cheshnovsky, O., Yang, S. H., Pettiette, P. L., Craycraft, M. J., and Smalley, R. E. (1987) Magnetic time-of-flight photoelectron spectrometer for mass-selected negative cluster ions. Rev. Sci. Instrum. 58, 2131–2137.
Ganteför, G., Meiwes-Broer, K. H., and Lutz, H. O., (1988) Photodetachment spectroscopy of cold aluminum cluster ions. Phys. Rev. A 37, 2716–2718.
Nakajima, A., Taguwa, T., Hoshino, K., Sugioka, T., Naganuma, T., Ono, F., Watanabe, K., Nakao, K., Konishi, Y., Kishi, R., and Kaya, K. (1993) Photoelectron spectroscopy of (C6F6)n - and (Au-C6F6)- clusters. Chem. Phys. Lett. 214, 22–26.
Hotop, H. and Lineberger, W. C. (1975) Binding energies in atomic negative ions. J. Phys. Chem. Ref. Data. 4, 539–576.
Esaulov, V. A. (1986) Electron detachment from atomic negative ions. Ann. Phys. Fr. 11, 493–592.
Kubo, K., Kondow, H., and Nishihara, H. private communication.
Schmeisser, D., Schnell, R. D., Bogen, A., Himpset, F. J., Rieger, D., Landgren, G., and Morar, J. F., (1986) Surface oxidation states of germanium, Surf. Sci. 172, 455–465.
Fujii, M., Hayashi, S., and Yamamoto, K., (1990) Raman scattering from quantum dots of Ge embedded in SiO2 thin films. Appl. Phys. Lett. 57, 2692–2694.
Fujii, M., Hayashi, S., and Yamamoto, K., (1991) Growth of Ge microcrystals in SiO2 thin film matrices: a Raman and electron microscopic study, Jpn. J. Appl. Phys. 30, 687–694.
Cheshnovsky, O., Yang, S. H., Pettiette, C. L., Craycraft, M. J., Liu, Y., and Smalley, R. E. (1987) Ultraviolet photoelectron spectroscopy of semiconductor clusters: silicon and germanium. Chem. Phys., Lett., 138, 119–124.
Burton, G. R., Xu, C., Arnold, C. C., and Neumark, D. M. (1996) Photoelectron spectroscopy and zero electron kinetic energy spectroscopy of germanium cluster anions. J. Chem. Phys., 104, 2757–2764.
Raghavachari, K. and Rohlfing, C. M. (1991) Si10 -: electron affinities of small silicon clusters. J. Chem. Phys., 94, 3670–3678
Kishi, R., Negishi, Y., Kawamata, H., Iwata, S., Nakajima, A., and Kaya, K. (1998) Geometric and electronic structures of fluorine bound silicon clusters. J. Chem. Phys. 108, 8039–8058.
Szabo, A. and Ostlund, N. L. “Modern Quantum Chemistiy” (Dover Publications, Mineola, 1996), p. 85.
Dai, D. and Balasubramanian, K. (1992) Electronic structure of group IV tetramers (Si4 — Pb4). J. Chem. phys. 96, 8345–8353.
Kittel, C. “ Introduction to Solid State Physics ” 6th Ed. (Willey, New York, 1986).
G. Herzberg, “Spectra of Diatomic Molecule” (Van Nostrand Reinhold Company Inc., New York, 1950), p. 530.
Boldyrev, A. I., Simons, J., Zakrzewski, V. G., and von Niessen, W. (1994) Vertical and adiabatic ionization energies and electron affinities of new SinC and SinO (n=1-3) molecules. J. Phys. Chem. 98, 1427–1435.
von Behren, J., van Bunren, T., Zacharias, M., Chimowits, E. H., and Fauchet, P. M. (1998) Quantum confinement in nanoscalc silicon: the correlation of size with bandgap and luminescence. Solid State Commun. 105, 317–322.
Rebohle, L., von Borany, J., Yankov, R. A., Skorupa, W., Tyschenko, I. E., Fröb, H., and Leo, K. (1997) Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers. Appl. Phys. Lett. 71, 2809–2811.
Hunter, J. M., Fye, J. L., Jarrold, M. F., and Bower, J. E., (1994) Structural transitions in size-selected germanium cluster ions. Phys. Rev. Lett. 73, 2063–2066.
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Nakajima, A., Fujii, M., Hayashi, S., Kaya, K. (2000). Visible and Infrared Photoluminescence from Deposited Germanium-Oxide Clusters and from Ge Nanocrystals. In: Pavesi, L., Buzaneva, E. (eds) Frontiers of Nano-Optoelectronic Systems. NATO Science Series, vol 6. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0890-7_20
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DOI: https://doi.org/10.1007/978-94-010-0890-7_20
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