Visible and Infrared Photoluminescence from Deposited Germanium-Oxide Clusters and from Ge Nanocrystals

  • Atsushi Nakajima
  • Minoru Fujii
  • Shinji Hayashi
  • Koji Kaya
Part of the NATO Science Series book series (NAII, volume 6)


Following Canham’s report of visible photoluminescence (PL) from porous silicon,1 the optical and electronic properties of nano-structures made from silicon (Si) or germanium (Ge) have attracted much attention, because they open a new possibility for photonic applications by the use of group-IV elements. In particular, PL properties of Si nanocrystals (nc-Si) have been widely studied and the relationship between the size of nc-Si and the PL peak energy has been revealed experimentally for at least red and near-infrared (NIR) PL.2–4 According to these reports, nc-Si with about 4 nm in diameter exhibits a PL peak at about 1.4 eV. As the size decreases further, the PL peak shifts to higher energies and reaches the visible region for nc-Si smaller than 2 nm. In contrast to nc-Si, there have been few reports on the size dependence of the PL spectra for Ge nanocrystals (nc-Ge). The nc-Ge has been prepared by several methods and these samples exhibit strong visible PL at about 2.2 eV independent of the size of nc-Ge (2–15 nm) and the preparation methods.5–11


Quartz Recombination Tungsten Fluorine Auger 


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Copyright information

© Springer Science+Business Media Dordrecht 2000

Authors and Affiliations

  • Atsushi Nakajima
    • 1
  • Minoru Fujii
    • 2
  • Shinji Hayashi
    • 2
  • Koji Kaya
    • 3
  1. 1.Department of ChemistryKeio UniversityKohoku-ku, YokohamaJapan
  2. 2.Department of Electrical and Electronics EngineeringKobe UniversityRokkodai, Nada, KobeJapan
  3. 3.Institute for Molecular ScienceMyodaiji, OkazakiJapan

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