Abstract
Silicon, the leading semiconductor in microelectronics industry, has for a long time been considered unsuitable for optoelectronic applications which remained the domain of III–V semiconductors and glass fibers. This is mainly due to the silicon indirect bandgap, which makes it a poor emitter, and to the absence of linear electro-optic effects. The enormous progress in communication technologies in the last years resulted in an increased demand for optoelectronic functions integrated with electronic circuits. This would allow to couple the information processing capabilities of microelectronics with the efficient interconnection properties of optoelectronics. In principle, silicon would be the material of choice, due to its mature processing technology and to its unrivaled domain in microelectronics, the main limiting step being the absence of efficient Sibased light sources.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Canham, L.T. (1993) Progress towards crystalline-silicon-based light-emitting diodes, MRS Bulletin 18, 22–28
Canham, L.T. (1990) Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, Appl. Phys. Lett. 57, 1046–1048.
Takagi, H., Ogawa, H., Yamazaki, Y., Ishizaki, A. and Nakagiri, T. (1990) Quantum size effects on photoluminescence in ultrafine Si particles, Appl. Phys. Lett. 56, 2379–2380.
Shimizu-Iwayama, T., Fujita, K., Nakao, S., Saitoh, K., Fujita, T. and Itoh, N. (1994) Visible photoluminescence in Si+–implanted silica glass, J. Appl. Phys. 75, 7779–7783.
Zhu, J.G., White, C.W., Budai, J.D., Withrow, S.P., and Chen, Y. (1995) Growth of Ge, Si and SiGe nanocrystals in SiO2 matrices, J. Appl. Phys. 78, 4386–4389.
Min, K.S., Shcheglov, K.V., Yang, C.M., Atwater, H.A., Brongersma, M.L., and Polman, A. (1996) The role of quantum-confined excitons vs defects in the visible luminescence of SiO2 films containing Ge nanocrystals, Appl. Phys. Lett. 68, 2511–2513.
Min, K.S., Shcheglov, K.V., Yang, C.M., Atwater, H.A., Brongersma, M.L., and Polman, A. (1996) Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2, Appl. Phys. Lett. 69, 2033–2035.
Brongersma, M.L., Polman, A., Min, K.S., Boer, E., Tambo, T., and Atwater, H.A. (1998) Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation, Appl. Phys. Lett. 72, 2577–2579.
Song, H.Z., and Bao, X.M. (1997) Visible photoluminescence from silicon-ion-implanted SiO2 film and its multiple mechanisms, Phys. Rev. B 55, 6988–6993.
Shimizu-Iwayama, T., Kunumado, N., Hole, D.E., and Townsend, P. (1998) Optical properties of silicon nanoclusters fabricated by ion implantation, J. Appl. Phys. 83, 6018–6022.
Lockwood, D.J., Lu, Z.H., and Baribeau, J.M. (1996) Quantum confined luminescence in Si/SiO2 superlattices, Phys. Rev. Lett. 96, 539–541.
D’Avitaya, F.A., Vervoort, L., Bassani, F., Ossicini, S., Fasolino, A., and Bernardini, F. (1995) Light emission at room temperature from Si/CaF2 multilayers, Europhysics Lett. 31, 25–30.
Hirschman, K.D., Tsybeskov, L., Duttagupta, S.P., and Fauchet, P.M. (1996) Silicon-based visible light-emitting devices integrated into microelectronic circuits, Nature 384, 338–341.
Ennen, H., Schneider, J., Pomrenke, G., and Axmann, A. (1983) 1.54-μm luminescence of erbium-implanted Hl-V semiconductors and silicon, Appl. Phys, Lett. 43, 943–945.
Michel, J., Benton, J.L., Ferrante, R.F., Jacobson, D.C., Eaglesham, D.J., Fitzgerald, E.A., Xie, Y.H., Poate, J.M., and Kimerling, L.C. (1991) Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon, J. Appl. Phys. 70, 2672–26
Palm, J., Gan, F., Zheng, B., Mitchel, J., and Kimerling, L.C. (1996) Electroluminescence of erbium-doped silicon, Phys. Rev. B 54, 17603–17615.
Priolo, F., Franzö, G., Coffa, S., and Camera, A. (1998) Excitation and nonradiative deexcitation processes of Er3+ in crystalline silicon, Phys. Rev. B 57, 4443–4455.
Franzò, G., Priolo, F., Coffa, S., Polman A., and Camera, A. (1994) Room temperature luminescence from Er-doped crystalline silicon, Appl. Phys. Lett. 64, 2235–2237.
Zheng, B., Michel, J., Ren, F.Y.G., Kimerling, L.C, Jacobson, D.C., and Poate, J.M. (1994) Roomtemperature sharp line electroluminescence at λ=154 μm from an erbium-doped, silicon light-emitting diode, Appl. Phys. Lett. 64, 2842–2844.
Stimmer, J., Reittinger, A., Nützel, J.F., Abstreiter, G., Holzbrecher, H., and Buchal, Ch. (1996) Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy, Appl. Phys. Lett. 68, 3290–3292.
Du, C-X., Ni, W-X., Joelsson, K.B., and Hansson, G.V, (1997) Room temperature 1.54 μm light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy, Appl. Phys. Lett. 71, 1023–1025.
Franzö, G., Coffa, S., Priolo, F., and Spinella, C. (1997) Mechanism and performance of forward and reverse bias electroluminescence 1.54 μm from Er-doped Si diodes, J. Appl. Phys. 81, 2784-2793.
Kenyon, A.J., Trwoga, P.F., Federighi, M., and Pitt, C.W. (1994) Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions, J. Phys.: Condens. Matter 6, L319–L324.
Fujii, M., Yoshida, M., Kanzawa, Y., Hayashi, S., and Yamamoto, K. (1997) 1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: evidence for energy transfer from Sinanocrystals to Er3+, Appl. Phys. Lett. 71, 1198–1200.
Fujii, M., Yoshida, M., Hayashi, S., and Yamamoto, K. (1998) Photoluminescence from SiO2 films containing Si nanocrystal and Er: effects of nanocrystalline size on the photoluminescence efficiency of Er3+, J. Appl. Phys. 84, 4525–4531.
Komuro, S., Katsumata, T., Morikawa, T., Zhao, X., Isshiki, H., and Aoyagi, Y. (1999) Time response of 1.54 μm emission from highly Er-doped nanocrystalline Si thin films prepared by laser ablation, Appl. Phys. Lett. 74, 377–379.
Franzö, G,, Vinciguerra, V., and Priolo, F. (1999) The excitation mechanism of rare-earth ions in silicon nanocrystals, Appl. Phys. A 69, 3–12.
Franzö, G., Iacona, F., Vinciguerra, V., and Priolo, F. (1999) Enhanced rare earth luminescence in silicon nanocrystals, Mat. Sci. & Eng. B 69/70, 338–341.
Chryssou, C.E., Kenyon, A.J., Iwayama, T.S., Pitt, C.W., and Hole, D.E. (1999) Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films, Appl. Phys. Lett. 75, 2011–2013.
Franzö, G., Pacifici, D., Vinciguerra, V., Priolo, F., and Iacona, F. (2000) Er3+ ions-Si nanocrystals interactions and their effects on the luminescence properties, Appl. Phys. Lett. 76, 2167–2169.
Franzö, G., Vinciguerra, V., and Priolo, F. (2000) Room temperature luminescence from rare earth ions implanted into Si nanocrystals, Phil. Mag. 80, 719–728.
Iacona, F., Franzö, G., and Spinella, C. (2000) Correlation between luminescence and structural properties of Si nanocrystals, J. Appl. Phys. 87, 1295–1303.
Vinciguerra, V., Franzö, G., Priolo, F., Iacona, F., and Spinella, C. (1 June 2000 issue) Quantum confinement and recombination dynamics in silicon nanocrystals embedded in Si/SiO2 superlattices, J. Appl. Phys. 87, 8165–8173.
Franzö, G., Iacona, F., Spinella, C., Cammarata, S., and Grimaldi, M.G. (2000) Size dependence of the luminescence properties in Si nanocrystals, Mat. Sci. & Eng. B 69/70 454–457.
Wolkin, M.V., Jörne, J., Fauchet, P.M., Allan. G., and Delerue, C. (1999) Electronic states and luminescence in porous silicon quantum dots: the role of oxygen, Phys. Rev. Lett. 82, 197–200.
Polman, A. (1997) Erbium implanted thin film photonic materials, J. Appl. Phys. 82, 1–39
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2000 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Priolo, F., Franzò, G., Iacona, F. (2000). Silicon Nanostructures and their Interactions with Erbium Ions. In: Pavesi, L., Buzaneva, E. (eds) Frontiers of Nano-Optoelectronic Systems. NATO Science Series, vol 6. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0890-7_11
Download citation
DOI: https://doi.org/10.1007/978-94-010-0890-7_11
Publisher Name: Springer, Dordrecht
Print ISBN: 978-0-7923-6746-8
Online ISBN: 978-94-010-0890-7
eBook Packages: Springer Book Archive