Abstract
The remarkable changes that the optoelectronic structure of silicon shows when the material is reduced to the nanometric scale have enticed many researchers to study from computational point of view the electronic and optical properties of confined Si systems, e.g Si quantum slabs, quantum wires and quantum dots. After a brief review of the actual situation, we present ab initio calculations of the optical properties of Si confined structures for two case studies: Si undulating quantum wires and Si/SiO2 quantum wells.
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Ossicini, S., Degoli, E. (2000). First Principles Optical Properties of Low Dimensional Silicon Structures. In: Pavesi, L., Buzaneva, E. (eds) Frontiers of Nano-Optoelectronic Systems. NATO Science Series, vol 6. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0890-7_10
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DOI: https://doi.org/10.1007/978-94-010-0890-7_10
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