Abstract
In this work the etching of Si-oxide, Si-nitride (LPCVD and PECVD) and Si-oxide/Si-nitride stacks in HF/H2O 263:73.7 and vapour HF is studied. Special attention is given to the residues, which were found to form during vapour HF etching of Si-nitride, PECVD Si-oxide and Si-oxide/Si-nitride stacks. These residues are not encountered during wet etching. Their origin and possible removal procedure are investigated.
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Du Bois, B. et al. (2001). HF Etching of Si-Oxides and Si-Nitrides for Surface Micromachining. In: Elwenspoek, M. (eds) Sensor Technology 2001. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0840-2_23
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DOI: https://doi.org/10.1007/978-94-010-0840-2_23
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-3841-6
Online ISBN: 978-94-010-0840-2
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