Skip to main content
SpringerLink
Log in

On the Feasibility of Using Antifuses as Low-Power Heating / Detecting Elements in Pellistor-Type Gas Sensors

  • Conference paper
Sensor Technology 2001

Abstract

This work is aimed at the novel idea of using the so-called antifuses for gas monitoring. It appears from the numerical modelling that the antifuses can be heated up to the melting point of Si (1415 °C) by absorbing electrical power in the mWatt range. A few-nanometer-scale antifuse is able to maintain a sufficiently high surface temperature for a 50 times larger surface area. A 50-°C increase of the link temperature leads to a 0.9–1.3 kΩ increase of the device resistance. The results of modelling confirm the feasibility of antifuses to perform as low-power heating/detecting elements in gas sensors.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Azad, A. M., Akbar, S.A., Mhaisalkar, S. G., Birkefeid, L. D., Goto, K. S. (1992) Solid-state gas sensors: a review, J. Electrochem. Soc. 139, 3690–3704.

    Article  CAS  Google Scholar 

  2. Clifford, P. K. and Tuma, D. T. (1983) Characteristics of semiconductor gas sensors. Parts I and II, Sensors and Actuators 3, pp. 255–281 and 233–54.

    Article  CAS  Google Scholar 

  3. Gall, M (1991) The Si planar pellistor: a low-power pellistor sensor in Si thin-film technology, Sensors and Actuators B (Chemical) B4, 533–538.

    Article  CAS  Google Scholar 

  4. Houtsma, V. E.: Gate oxide reliability of poly-Si and poly-GeSi CMOS devices, Ph.D. Dissertation, University of Twente, Enschede, 1999.

    Google Scholar 

  5. SILVACO International: Athena user’s manual and Atlas user’s manual (device simulation software), April 1997.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. MESA+ Research Institute, University of Twente, P.O. Box 217, 7500 AE, Enschede, The Netherlands

    A. Y. Kovalgin, J. Holleman & A. van den Berg

Authors
  1. A. Y. Kovalgin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. J. Holleman
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. van den Berg
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. MESA+ Research Institute, University of Twente, Enschede, The Netherlands

    Miko Elwenspoek

Rights and permissions

Reprints and permissions

Copyright information

© 2001 Springer Science+Business Media Dordrecht

About this paper

Cite this paper

Kovalgin, A.Y., Holleman, J., van den Berg, A. (2001). On the Feasibility of Using Antifuses as Low-Power Heating / Detecting Elements in Pellistor-Type Gas Sensors. In: Elwenspoek, M. (eds) Sensor Technology 2001. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0840-2_19

Download citation

  • DOI: https://doi.org/10.1007/978-94-010-0840-2_19

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-3841-6

  • Online ISBN: 978-94-010-0840-2

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation