Abstract
We present a study on spontaneous THz emission from semiconductor quantum structures. THz emission from parabolically graded AlGaAs/GaAs quantum wells driven by an in-plane electric field has been measured. We have analyzed the grating coupled radiation in the temperature range from 20 K to 240 K. The peak emission corresponds to the intersubband plasmon in the parabolic potential. From a quantum cascade structure we observe spontaneous THz emission, based on carrier injection into the excited state of a 26 nm quantum well. We have measured luminescence at a photon energy of 17.3 meV with a full linewidth at half maximum of 1.3 meV. In the presence of a magnetic field (B = 7.2 T) applied normal to the epitaxial layers the emission efficiency doubles. This effect is attributed to the suppression of non-radiative Auger-intersubband transitions caused by Landau-quantization of the in-plane electron motion.
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© 2001 Springer Science+Business Media Dordrecht
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Ulrich, J., Zobl, R., Strasser, G., Unterrainer, K. (2001). Terahertz emission from semiconductor nanostructures. In: Miles, R.E., Harrison, P., Lippens, D. (eds) Terahertz Sources and Systems. NATO Science Series, vol 27. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0824-2_8
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DOI: https://doi.org/10.1007/978-94-010-0824-2_8
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