Abstract
A channel of a field effect transistor might act as a resonance cavity for the plasma waves. For micron or sub-micron gate lengths, the fundamental frequency of this cavity is in the terahertz range and can be easily tuned by changing the gate bias. The quality factor of this plasma wave resonator depends on the momentum relaxation time and on the plasma frequency determined by the device length. A short field effect transistor can be used as a basic device for resonant detection, mixing, multiplication, and even generation of terahertz radiation.
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Dyakonov, M., Shur, M.S. (2001). Plasma Wave Electronics for Terahertz Applications. In: Miles, R.E., Harrison, P., Lippens, D. (eds) Terahertz Sources and Systems. NATO Science Series, vol 27. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0824-2_12
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DOI: https://doi.org/10.1007/978-94-010-0824-2_12
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