Abstract
The progress in understanding of Si (001) surface structure has been well described in a series of review papers and conference proceedings [1,2] This surface has two dangling bonds per surface atom which move towards each other in pairs leading to (2x1) unit cell formation. Higher-order periodicities have been observed as well as disordered atomic configurations. Ab initio theoretical calculations of relaxation processes in semiconductor surface layers are limited by the great complexity of the phenomena involved, and thus forcing the use of simulation tools.
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© 2001 Springer Science+Business Media Dordrecht
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Kiv, A.E., Maximova, T.I., Soloviev, V.N. (2001). MD Simulation of the Ion-Stimulated Processes in Si Surface Layers. In: Baraton, MI., Uvarova, I. (eds) Functional Gradient Materials and Surface Layers Prepared by Fine Particles Technology. NATO Science Series, vol 16. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0702-3_30
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DOI: https://doi.org/10.1007/978-94-010-0702-3_30
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