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Micro-/Poly-Crystalline Silicon Materials For Thin Film Photovoltaic Devices: Physical Properties

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Photovoltaic and Photoactive Materials — Properties, Technology and Applications

Part of the book series: NATO Science Series ((NAII,volume 80))

Abstract

This paper discusses some of the physical properties of poly-Si films that determine their device performance. For a specific case, the compact poly-Si films grown by HWCVD at Utrecht University (UU) will be described. The causes for the naturally enhanced optical absorption of poly-Si, which makes it possible to use it as a thin film photovoltaic material, will be probed, as will the oxygen incorporation which creates donor states that have adverse effects on solar cell performance. It will be shown that extremely intrinsic poly-Si material can be made by HWCVD.

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Author information

Authors and Affiliations

  1. Utrecht University, Debye Institute, Surface, Interface and Devices, P.O. Box 80.000, 3508 TA, Utrecht, The Netherlands

    J. K. Rath

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  1. J. K. Rath
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Editor information

Editors and Affiliations

  1. Electronic Materials Centre, Department of Materials Engineering, University of Wales Swansea, Swansea, UK

    J. M. Marshall

  2. Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Sofia, Bulgaria

    D. Dimova-Malinovska

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© 2002 Springer Science+Business Media Dordrecht

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Rath, J.K. (2002). Micro-/Poly-Crystalline Silicon Materials For Thin Film Photovoltaic Devices: Physical Properties. In: Marshall, J.M., Dimova-Malinovska, D. (eds) Photovoltaic and Photoactive Materials — Properties, Technology and Applications. NATO Science Series, vol 80. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0632-3_9

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  • DOI: https://doi.org/10.1007/978-94-010-0632-3_9

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-0824-5

  • Online ISBN: 978-94-010-0632-3

  • eBook Packages: Springer Book Archive

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