Abstract
In the search for higher photovoltaic (PV) conversion efficiencies, multiple band gap concepts have received increased theoretical attention in the last few years. Many dual band gap systems are based on the semiconductor couple GexSi1-x/Si. However, this is not the optimum theoretical pairing for maximum system efficiency, because of both economic and technological criteria. The Si cell may work at a moderate concentration of infrared light which would be unconverted by GaAs (energy lower than about 1.5 eV). However, by changing the basic solar cell material from Si to a GexSi1-x alloy, with the least possible modification, solar technology can fully profit from present knowledge and future improvements [1–4].
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© 2002 Springer Science+Business Media Dordrecht
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Pociask, M.M., Kąkol, T., Sheregii, E.M., Pociask, M.A., Tomaka, G.M. (2002). Enhancement Of The Photovoltaic Efficiency Of Ge0.2Si0.8/Si Photodiodes. In: Marshall, J.M., Dimova-Malinovska, D. (eds) Photovoltaic and Photoactive Materials — Properties, Technology and Applications. NATO Science Series, vol 80. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0632-3_21
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DOI: https://doi.org/10.1007/978-94-010-0632-3_21
Publisher Name: Springer, Dordrecht
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