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Temperature And Compositional Dependence Of Raman Scattering And Photoluminescence Emission In CuxGaySe2 Thin Films

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Photovoltaic and Photoactive Materials — Properties, Technology and Applications

Part of the book series: NATO Science Series ((NAII,volume 80))

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Abstract

Raman scattering and photoluminescence emission of CuxGaySe2 thin films grown by MOCVD and by PVD were studied at room and low temperatures in dependence of composition. The simultaneous broadening of both Raman- and PL-bands with increasing Ga-content, and the simultaneous intensity enhancement of defect related Raman modes and PL-bands observed in Ga-rich samples with decreasing temperature are discussed.

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References

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Author information

Authors and Affiliations

  1. Hahn-Meitner Institut, Glienickerstr. 100, 14109, Berlin, Germany

    S. Siebentritt & M. Ch. Lux-Steiner

  2. Dept of Physics, National Technical University, 15780, Athens, Greece

    C. Xue, D. Papadimitriou & Y. S. Raptis

  3. Institut für Festkörperphysik, TU-Berlin, 10623, Berlin, Germany

    N. Esser & W. Richter

Authors
  1. C. Xue
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  2. D. Papadimitriou
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  3. Y. S. Raptis
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  4. N. Esser
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  5. W. Richter
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  6. S. Siebentritt
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  7. M. Ch. Lux-Steiner
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Editor information

Editors and Affiliations

  1. Electronic Materials Centre, Department of Materials Engineering, University of Wales Swansea, Swansea, UK

    J. M. Marshall

  2. Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Sofia, Bulgaria

    D. Dimova-Malinovska

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© 2002 Springer Science+Business Media Dordrecht

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Xue, C. et al. (2002). Temperature And Compositional Dependence Of Raman Scattering And Photoluminescence Emission In CuxGaySe2 Thin Films. In: Marshall, J.M., Dimova-Malinovska, D. (eds) Photovoltaic and Photoactive Materials — Properties, Technology and Applications. NATO Science Series, vol 80. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0632-3_20

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  • DOI: https://doi.org/10.1007/978-94-010-0632-3_20

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-0824-5

  • Online ISBN: 978-94-010-0632-3

  • eBook Packages: Springer Book Archive

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