Abstract
The states in the mobility gap of amorphous hydrogenated silicon play an important role in determining its optical and electrical properties, and it is essential to know their density and distribution in the gap. Space Charge Limited Current (SCLC) is a classic and a well-known method for determining this density of states [1–4]. In SCLC measurements, the superlinear I–V dark characteristics due to injected charges from the ohmic contacts are measured. When the injection is large enough to displace significantly the quasi Fermi level from its equilibrium position, the current start to rise super-linearly. The magnitude of the current and the shape of the curve depend on the density of states just above the equilibrium Fermi level, so this portion of the curve can be used to determine this quantity.
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References
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© 2002 Springer Science+Business Media Dordrecht
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Eray, A., Nobile, G. (2002). Evaluation Of The Gap State Distribution In a-Si:H By SCLC Measurements. In: Marshall, J.M., Dimova-Malinovska, D. (eds) Photovoltaic and Photoactive Materials — Properties, Technology and Applications. NATO Science Series, vol 80. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0632-3_14
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DOI: https://doi.org/10.1007/978-94-010-0632-3_14
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-0824-5
Online ISBN: 978-94-010-0632-3
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