A Highly Sensitive Spin-Valve Transistor
In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change in the collector current with magnetic field using a spin valve that shows only 0.5% resistance change in a current in plane measurement.
KeywordsSmit Anil Zinn
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- Kim, S. D., van’ t Erve, O. M. J., Jansen, R., Anil Kumar, P. S., Vlutters, R. and Lodder, J. C. (submitted) Fabrication technology for miniaturization of the spin-valve transistorGoogle Scholar
- Jansen, R., Kumar, P.S.A., van’ t Erve, O.M.J., Vlutters, R., de Haan P. and Lodder, J.C. (submitted) Thermal spin-wave scattering in hot-electron magnetotransport across a spin valveGoogle Scholar
- van’ t Erve, O.M.J., Anil Kumar, P.S., Jansen, R., Kim, S.D., Vlutters, R., Lodder, J.C, Smits A.A. and de Jonge, W.J.M. (submitted) Noise properties of the spin-valve transistorGoogle Scholar