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A Highly Sensitive Spin-Valve Transistor

  • O. M. J. Van’ T Erve
  • R. Vlutters
  • P. S. Anil Kumar
  • S. D. Kim
  • R. Jansen
  • J. C. Lodder
Part of the NATO Science Series book series (NAII, volume 41)

Abstract

In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change in the collector current with magnetic field using a spin valve that shows only 0.5% resistance change in a current in plane measurement.

Keywords

Schottky Barrier Collector Current Spin Valve Schematic Cross Section Terminal Device 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer Science+Business Media Dordrecht 2001

Authors and Affiliations

  • O. M. J. Van’ T Erve
    • 1
  • R. Vlutters
    • 1
  • P. S. Anil Kumar
    • 1
  • S. D. Kim
    • 1
  • R. Jansen
    • 1
  • J. C. Lodder
    • 1
  1. 1.Information Storage Technology Group, MESA+ Research InstituteUniversity of TwenteEnschedeThe Netherlands

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