Abstract
In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change in the collector current with magnetic field using a spin valve that shows only 0.5% resistance change in a current in plane measurement.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Baibich, M. N., Broto, J. M., Fert, A., Nguyen Van Dau, F., Petroff, F., Eitenne, P., Creuzet, G., Friederich, A. and Chazelas, J. (1988) Giant magnetoresistance of (001 )Fe/(001 )Cr magnetic superlattices, Phys. Rev. Lett., 61(21), 2472–2475
Binasch, G., Grunberg, P., Saurenbach, F. and Zinn, W. (1989) Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange, Phys. Rev. B, 39(7), 4828–4830
Monsma, D.J., Vlutters, R. and Lodder, J.C. (1998) Room temperature-operating Spin-Valve Transistor formed by vacuum bonding, Science 281, 407
Anil Kumar, P.S., Jansen, R., van’ t Erve, O.M.J., Vlutters, R., de Haan, P. and Lodder, J.C. (2000) Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature, J. Magn. Magn. Mater. 214 L1–L6
Mizushima, K., Kinno, T., Yamauchi, T. and Tanaka, K. (1997) Energy-dependent hot electron transport across a spin-valve, IEEE trans, on magn. 33(5) 3500–3504.
Dessein, K., Boeve, H., Anil kumar, P.S., De Boeck, J., Lodder, J.C., Delaey, L and Borghs, G. (2000) Evaluation of vacuum bonded GaAs/Si spin-valve transistors, J. Appl. Phys. 87(9) 5155–5157.
Shimatsu, T., Mollema, R. H., Monsma, D., Keim, E. G. and Lodder, J. C. (1998) Metal bonding during sputter film deposition, J. Vac. Sci. Technol. A, 16(4), 2125–2131
Kim, S. D., van’ t Erve, O. M. J., Jansen, R., Anil Kumar, P. S., Vlutters, R. and Lodder, J. C. (submitted) Fabrication technology for miniaturization of the spin-valve transistor
Jansen, R., Kumar, P.S.A., van’ t Erve, O.M.J., Vlutters, R., de Haan P. and Lodder, J.C. (submitted) Thermal spin-wave scattering in hot-electron magnetotransport across a spin valve
van’ t Erve, O.M.J., Anil Kumar, P.S., Jansen, R., Kim, S.D., Vlutters, R., Lodder, J.C, Smits A.A. and de Jonge, W.J.M. (submitted) Noise properties of the spin-valve transistor
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2001 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Van’ T Erve, O.M.J., Vlutters, R., Anil Kumar, P.S., Kim, S.D., Jansen, R., Lodder, J.C. (2001). A Highly Sensitive Spin-Valve Transistor. In: Hadjipanayis, G.C. (eds) Magnetic Storage Systems Beyond 2000. NATO Science Series, vol 41. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0624-8_40
Download citation
DOI: https://doi.org/10.1007/978-94-010-0624-8_40
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-0118-5
Online ISBN: 978-94-010-0624-8
eBook Packages: Springer Book Archive