A Highly Sensitive Spin-Valve Transistor
In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change in the collector current with magnetic field using a spin valve that shows only 0.5% resistance change in a current in plane measurement.
KeywordsSchottky Barrier Collector Current Spin Valve Schematic Cross Section Terminal Device
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