A Highly Sensitive Spin-Valve Transistor

  • O. M. J. Van’ T Erve
  • R. Vlutters
  • P. S. Anil Kumar
  • S. D. Kim
  • R. Jansen
  • J. C. Lodder
Part of the NATO Science Series book series (NAII, volume 41)

Abstract

In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change in the collector current with magnetic field using a spin valve that shows only 0.5% resistance change in a current in plane measurement.

Keywords

Smit Anil Zinn 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    Baibich, M. N., Broto, J. M., Fert, A., Nguyen Van Dau, F., Petroff, F., Eitenne, P., Creuzet, G., Friederich, A. and Chazelas, J. (1988) Giant magnetoresistance of (001 )Fe/(001 )Cr magnetic superlattices, Phys. Rev. Lett., 61(21), 2472–2475CrossRefGoogle Scholar
  2. [2]
    Binasch, G., Grunberg, P., Saurenbach, F. and Zinn, W. (1989) Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange, Phys. Rev. B, 39(7), 4828–4830CrossRefGoogle Scholar
  3. [3]
    Monsma, D.J., Vlutters, R. and Lodder, J.C. (1998) Room temperature-operating Spin-Valve Transistor formed by vacuum bonding, Science 281, 407CrossRefGoogle Scholar
  4. [4]
    Anil Kumar, P.S., Jansen, R., van’ t Erve, O.M.J., Vlutters, R., de Haan, P. and Lodder, J.C. (2000) Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature, J. Magn. Magn. Mater. 214 L1–L6CrossRefGoogle Scholar
  5. [5]
    Mizushima, K., Kinno, T., Yamauchi, T. and Tanaka, K. (1997) Energy-dependent hot electron transport across a spin-valve, IEEE trans, on magn. 33(5) 3500–3504.CrossRefGoogle Scholar
  6. [6]
    Dessein, K., Boeve, H., Anil kumar, P.S., De Boeck, J., Lodder, J.C., Delaey, L and Borghs, G. (2000) Evaluation of vacuum bonded GaAs/Si spin-valve transistors, J. Appl. Phys. 87(9) 5155–5157.CrossRefGoogle Scholar
  7. [7]
    Shimatsu, T., Mollema, R. H., Monsma, D., Keim, E. G. and Lodder, J. C. (1998) Metal bonding during sputter film deposition, J. Vac. Sci. Technol. A, 16(4), 2125–2131CrossRefGoogle Scholar
  8. [8]
    Kim, S. D., van’ t Erve, O. M. J., Jansen, R., Anil Kumar, P. S., Vlutters, R. and Lodder, J. C. (submitted) Fabrication technology for miniaturization of the spin-valve transistorGoogle Scholar
  9. [9]
    Jansen, R., Kumar, P.S.A., van’ t Erve, O.M.J., Vlutters, R., de Haan P. and Lodder, J.C. (submitted) Thermal spin-wave scattering in hot-electron magnetotransport across a spin valveGoogle Scholar
  10. [10]
    van’ t Erve, O.M.J., Anil Kumar, P.S., Jansen, R., Kim, S.D., Vlutters, R., Lodder, J.C, Smits A.A. and de Jonge, W.J.M. (submitted) Noise properties of the spin-valve transistorGoogle Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2001

Authors and Affiliations

  • O. M. J. Van’ T Erve
    • 1
  • R. Vlutters
    • 1
  • P. S. Anil Kumar
    • 1
  • S. D. Kim
    • 1
  • R. Jansen
    • 1
  • J. C. Lodder
    • 1
  1. 1.Information Storage Technology Group, MESA+ Research InstituteUniversity of TwenteEnschedeThe Netherlands

Personalised recommendations