Abstract
Effect of annealing at up to 1400 K under argon pressure up to 1.2 GPa on hydrogen — plasma — etched and hydrogen — implanted Czochralski or FZ silicon was investigated by SIMS, X — ray, TEM, electrical, infrared and photoluminescence methods.
External stress during annealing of hydrogen — containing Si results in suppression of hydrogen out — diffusion but in its pronounced diffusion into sample depth, in stress — stimulated creation of small bubbles, thermal donors and crystallographic defects but in preventing of sample splitting.
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Abbreviations
- co :
-
concentration of oxygen in interstitial positions
- CVD:
-
chemical vapour deposition
- Cz-Si:
-
Czochralski - grown single crystalline silicon
- d:
-
distance between crystallographic planes
- D:
-
hydrogen dose in hydrogen - implanted Si:H samples
- FZ-Si:
-
floating zone grown single crystalline silicon
- HP:
-
enhanced (high) hydrostatic pressure
- HPE-Si:
-
hydrogen - plasma etched silicon
- HT - HP:
-
treatment (annealing) at HP
- IR:
-
infrared absorption (measurement)
- PL:
-
photoluminescence
- Si:H:
-
hydrogen - implanted silicon
- SIMS:
-
secondary ions mass spectrometry
- SOl:
-
silicon on insulator (Si / Si02 / Si) structure
- TEM:
-
transmission electron microscopy
- λ:
-
X - ray wavelength
References
A.G. Ulyashin, Yu. A. Bumay, R. Job, G. Grabosch, D. Borchert, W.R. Fahrner, A. Yu. Diduk, Solid State Phenomena, 57-58 (1997) 189.
Y. Tokuda, A. Ito, H. Ohshima, Semicond.Sci.Technol., 13 (1997) 194.
X. Lu, N.W. Cheung, M.D. Strathman, P.K. Chu, B. Doyle, Appl.Phys.Lett., 71 (1997) 1804.
B. Surma, A. Misiuk, J. Jun, M. Rozental, A. Wnuk, A.G. Ulyashin, I.V. Antonova, V.P. Popov, R. Job, Proceed. ASDAM′98, Smolenice, Slovakia 1998, J. Breza, D. Donoval, V. Drobny, F. Uherek, Eds, p. 47 (1998).
A. Misiuk, P. Zaumseil, Electrochem.Soc.Proceed., 95-30 (1995) 194.
A. Misiuk, B. Surma, L. Rebohle, J. Jun, I.V. Antonova, I. Tyschenko, A. Romano-Rodriguez, M. Lopez, phys. stat. sol.(b), 211 (1999) 233.
S.J. Pearton, J.W. Corbett, M. Stavola, Hydrogen in Crystalline Semiconductors, Springer Verlag, Berlin (1992) p. 153.
M. Tajima, A. Ogura, T. Karasawa, A. Mizoguchi, Jpn.J. Appl.Phys. 2, Lett., 37 (1998) L1199.
A. Misiuk. B. Surma, in International Conference on Solid State Crystals ′98: Single Crystal Growth, Characterisation and Applications, A. Majchrowski, J. Zielinski, Eds, Proceed. SPIE, Vol. 3724, p. 239 (1999).
A. Misiuk, W. Jung, B. Surma, J. Jun, M. Rozental, Solid State Phenomena, 57-58 (1997) 393.
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Misiuk, A. et al. (2002). Effect of Annealing at Argon Pressure Up to 1.2 GPa on Hydrogen — Plasma Etched and Hydrogen — Implanted Single — Crystalline Silicon. In: Hampton, M.D., Schur, D.V., Zaginaichenko, S.Y., Trefilov, V.I. (eds) Hydrogen Materials Science and Chemistry of Metal Hydrides. NATO Science Series, vol 71. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0558-6_43
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DOI: https://doi.org/10.1007/978-94-010-0558-6_43
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