Abstract
A cheap liquid methyltriclorosilane as a new precursor in a plasma-enhanced-chemical-vapor-deposition system with a very high frequency discharge for preparing high quality hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films with the large carbon content is used. In such approach, the composition and optoelectronic properties of the films are controlled by varying such the deposition parameters as hydrogenation, additional DC bias, MTCS flow rate. This method allows to control the composition and the morphology of a-SiC:H films in the region of 0.3<x<0.7. The monocrystalline fraction, consisting of 3C-SiC crystallites in an amorphous network (μx-SiC:H), is revealed in the films with the composition of about 0.5 at definite deposition conditions.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Abbreviations
- MTCS:
-
Methyltriclorosilane
- PECVD:
-
Plasma-enhanced-chemical-vapour-deposition
- VHF:
-
Very high frequency
- Ud :
-
Additional DC bias
- 3C-SiC:
-
Single crystal having cubic structure
- Ts :
-
Substrate temperature
- Eg :
-
Optical bandgap
References
A.M. Wrobel, M. Kryszewski and M. Gazicki, J. Macromol Sci. Chem. A, 4 2726 (1986).
T.D. Bonifield, in Deposition Technologies for Folms and Coatings, ed. By R.F. Bunshah, Noeys Publications, Park Ridge, NJ., 1982
R. Heyner and G. Marx, Thin Solid Films, 258 14 (1995).
Tabata, S. Fujii, Y. Suzuoki, T. Mizutani and M. Ieda, J. Phys. D: Appl. Phys., 23 316 (1990).
J. Folsch, H. Rubel, H. Schade, Appl. Phys. Lett. 61 3029 (1992).
Y. Li, A. Catalano and B.F. Fieselmann in «Amorphous Silicon Technology», MRS, Pittsburgh, 258 923 (1992).
G. Leo, G. Galluzzi, G. Guattari R. Vincenzoni, F. Demichelis, G. Grovini, C.F. Pirri and E. Tresso, J. Non-Cryst. Solids, 164-166 1035 (1993).
V. Mastelaro, A.M. Flank, M.C.A. Fantini, D.R.S. Bittencourt, M.N.P. Carreno and I. Pereira, J. Appl. Phys. 79 1324 (1996).
A. Tabata, Y. Kuno, Y. Suzuoki and T. Mizutani, J. Non-Cryst. Solids, 164-166 1043 (1993).
V. Chy, J.P. Conde, J. Jagero, P. Brogueira, J. Rodriguez, N. Barradas and J.C. Soares, J. Appl. Phys. 78 3164 (1995).
J. Bullot and M.P. Schmidt, Phys. Stat. Sol. (b) 143 345 (1987).
K. Mui, D. K. Basa, F.W. Smith and R. Corderman, Phys. Rev. B, 35 8089 (1987).
A. Matsuda, T. Yamaoka, S. Wolf, M. Koyama, Y. Imanishi, H. Kataoka, H. Matsuura and K. Tanaka, J. Appl. Phys., 60 4025 (1986).
R. Zedilitz, E. Lotter and M. Heintzer, J. Non-Cryst. Solids, 164–166 1031 (1993).
J. Tauc and A. Menth, J. Non-Cryst. Solids, 8–10 569 (1972).
Y. Hamakawa, Renable Energy, 1522 (1998).
F. Demichelis, C.F. Pirri and E. Tresso, Phil. Mag. B, 66 135 (1992).
F. Demichelis, C.F. Pirri and E. Tresso, Phil. Mag. B, 67 331 (1993).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2002 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Ivashchenko, L.A., Rusakov, G.V., Ivashchenko, V.I. (2002). Influence of Some Parameters of the PECVD on the Composition and Properties of a-SiC:H Films. In: Hampton, M.D., Schur, D.V., Zaginaichenko, S.Y., Trefilov, V.I. (eds) Hydrogen Materials Science and Chemistry of Metal Hydrides. NATO Science Series, vol 71. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0558-6_31
Download citation
DOI: https://doi.org/10.1007/978-94-010-0558-6_31
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-0731-6
Online ISBN: 978-94-010-0558-6
eBook Packages: Springer Book Archive