Quantum In-Plane Magnetoresistance in 2D Electron Systems

  • J. S. Meyer
  • V. I. Fal’ko
  • B. L. Altshuler
Part of the NATO Science Series book series (NAII, volume 72)

Abstract

Studies of low-dimensional electron systems subject to an in-plane magnetic field have come to the focus of intense attention recently. In several experiments the influence of an in-plane magnetic field on two- and one-dimensional electrons in semiconductor heterostructures [1, 2] as well as in lateral quantum dot devices [3] has been investigated. The use of the fairly unconventional in-plane field geometry aimed at achieving a stronger magnetic field influence on the 2D electron spin, thus, compensating the dominance of orbital effects in most of the known semiconductor materials. Then, by manipulating the field-induced spin polarization, one may extract information about the ground state properties of interacting electrons. At low temperatures—i.e., in the regime where electron- electron interactions open the possibility of a metal-insulator transition or the ferromagnetic Stoner instability—interaction effects coexist with single-particle interference effects. The aim of this article is to provide a theoretical overview of possible influences of an in-plane magnetic field on single-particle quantum transport phenomena in semiconductor heterostructures, quantum wells, and lateral dots.

Keywords

Anisotropy Manifold Coherence GaAs Posite 

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Copyright information

© Springer Science+Business Media Dordrecht 2002

Authors and Affiliations

  • J. S. Meyer
    • 1
  • V. I. Fal’ko
    • 2
  • B. L. Altshuler
    • 3
    • 4
  1. 1.Institut für Theoretische PhysikUniversität zu KölnKölnGermany
  2. 2.Physics DepartmentLancaster UniversityLancasterUK
  3. 3.Physics DepartmentPrinceton UniversityUSA
  4. 4.NECIPrincetonUSA

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