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Pressure Induced Phase Transitions in GaSe-, TlGaSe2- and CdGa2S4-type Crystals

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Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials

Part of the book series: NATO Science Series ((NAII,volume 48))

Abstract

An overview is given of recent experimental results on the structural and optical properties of layered GaSe-, TlGaSe2-, and defect chalcopyrite CdGa2S4-type semiconductors under hydrostatic pressure. Emphasis is made on pressure induced phase transitions. Perspectives for future research are considered in this article, which does not pretend to he one reflecting all existing papers on discussed subjects.

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Author information

Authors and Affiliations

  1. Marmara Research Center, Materials and Chemical Technologies Research Institute, TÚBÍTAK, P.K. 21, Gebze, Kocaeh, 41470, Turkey

    K. R. Allakhverdiev

  2. Institute of Physics, Azerbaijan Academy of Sciences, H. Javid avenue 33, 370143, Baku, Azerbaijan

    K. R. Allakhverdiev

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  1. K. R. Allakhverdiev
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Editors and Affiliations

  1. Department of Physics, Colorado State University, Fort Collins, CO, USA

    Hans D. Hochheimer

  2. Institute of Physical and Theoretical Chemistry, Wroclaw University of Technology, Wroclaw, Poland

    Bogdan Kuchta

  3. Department of Chemistry, Colorado State University, Fort Collins, CO, USA

    Peter K. Dorhout

  4. Department of Chemistry, University of Wyoming, Laramie, WY, USA

    Jeffery L. Yarger

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Allakhverdiev, K.R. (2001). Pressure Induced Phase Transitions in GaSe-, TlGaSe2- and CdGa2S4-type Crystals. In: Hochheimer, H.D., Kuchta, B., Dorhout, P.K., Yarger, J.L. (eds) Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials. NATO Science Series, vol 48. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0520-3_8

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  • DOI: https://doi.org/10.1007/978-94-010-0520-3_8

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-0160-4

  • Online ISBN: 978-94-010-0520-3

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