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Resistance and Magnetoresistance of UIrGe under High Pressure

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Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials

Part of the book series: NATO Science Series ((NAII,volume 48))

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Abstract

UIrGe crystallizes in the orthorhombic TiNiSi-type structure and orders antiferromagnetically below TN = 14.5 K. We report on resistance and magnetoresistance results on single-crystalline UIrGe with the current along the α-axis and the magnetic field applied along the b-axis under hydrostatic pressure up to 9 kbar. Application of pressure reduces TN and 48 kbar is estimated to suppress the antiferromagnetic ground state. In applied magnetic fields, two metamagnetic transitions occur at low temperatures, and the transition fields decrease slightly with increasing pressure. In comparison with other uranium compounds, the results are discussed in terms of moment instability and variation of the exchange due to increased 5f-ligand hybridization.

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Author information

Authors and Affiliations

  1. Physics Department, MSC 3D, New Mexico State University, P.O. Box 3001, Las Cruces, NM, 88003

    A.M. Alsmadi, S. Chang, M.H. Jung & H. Nakotte

  2. National High Magnetic Field Laboratory, Pulse Field Facility, Los Alamos National Laboratory, Los Alamos, NM, 87545

    M.H. Jung & A.H. Lacerda

  3. Van der Waals-Zeeman Instituut, Universiteit van Amsterdam, Valckenierstraat 65, 1018 XE, Amsterdam, The Netherlands

    E. Brück & M. Mihalik

  4. BENSC, Hahn-Meitner Institute, SF-2, Glienickerstrasse 100, D-14109, Berlin, Germany

    K. ProkeŠ

  5. Department of Electronic Structures, Charles University, Ke Karlovu 5, 12 116, Prague 2, The Czech Republic

    K. ProkeŠ & V. Sechovsky

  6. Laboratory of High Pressure, Institute of Physics, AS CR, Czech Academy of Sciences, Cukrovarnicka 10, 162 53, Prague 6, Czech Republic

    J. Kamarad

  7. Institute of Experimental Physics, Slovak Academy of Sciences, 04354, Kosice, Slovak Republic

    M. Mihalik

Authors
  1. A.M. Alsmadi
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  2. S. Chang
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  4. A.H. Lacerda
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  5. E. Brück
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  6. K. ProkeŠ
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  7. V. Sechovsky
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  8. J. Kamarad
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  9. M. Mihalik
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  10. H. Nakotte
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Editor information

Editors and Affiliations

  1. Department of Physics, Colorado State University, Fort Collins, CO, USA

    Hans D. Hochheimer

  2. Institute of Physical and Theoretical Chemistry, Wroclaw University of Technology, Wroclaw, Poland

    Bogdan Kuchta

  3. Department of Chemistry, Colorado State University, Fort Collins, CO, USA

    Peter K. Dorhout

  4. Department of Chemistry, University of Wyoming, Laramie, WY, USA

    Jeffery L. Yarger

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© 2001 Springer Science+Business Media Dordrecht

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Alsmadi, A. et al. (2001). Resistance and Magnetoresistance of UIrGe under High Pressure. In: Hochheimer, H.D., Kuchta, B., Dorhout, P.K., Yarger, J.L. (eds) Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials. NATO Science Series, vol 48. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0520-3_35

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  • DOI: https://doi.org/10.1007/978-94-010-0520-3_35

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-0160-4

  • Online ISBN: 978-94-010-0520-3

  • eBook Packages: Springer Book Archive

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