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Ultraviolet-Assisted Pulsed Laser Deposition of Thin Oxide Films

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Atomistic Aspects of Epitaxial Growth

Part of the book series: NATO Science Series ((NAII,volume 65))

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Abstract

The properties of thin Y2O3, ZnO and Ba0.5Sr0.5TiO3 films grown using an in situ ultraviolet (UV)-assisted pulsed laser deposition (UVPLD) technique have been studied. With respect to films grown by conventional PLD under similar conditions, but without UV illumination, the UVPLD grown films exhibit better structural, optical, morphological and electrical properties, especially for lower substrate temperatures. They also exhibit a better stoichiometry and contain less physisorbed oxygen than the conventional PLD grown layers. It has been found that physisorbed oxygen is the main oxygen source for the growth at the interface between the Si substrate and the deposited layer, of a SiO x interfacial layer. The improvement of the UVPLD grown film properties can be traced to several factors. First, deep UV photons and ozone ensure better in situ cleaning of the substrate prior to deposition. Second, the presence of more reactive gaseous species like ozone and atomic oxygen formed by photodissociation of molecular O2 promotes the growth of more oxygenated films. Finally, absorption of UV photons by adatoms could result in an increase of their surface mobility. All these factors have a beneficial effect upon crystalline growth, especially for moderate substrate temperatures.

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Author information

Authors and Affiliations

  1. Engineering and Research Center for Particles, Department of Materials Science& Engineering, University of Florida, Gainesville, FL, 32611, USA

    V. Craciun

  2. National Institute for Laser, Plasma and Radiation Physics, Bucharest, Romania

    V. Craciun

  3. Engineering and Research Center for Particles, Department of Materials Science & Engineering, University of Florida, Gainesville, FL, 32611, USA

    R. K. Singh

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  1. V. Craciun
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Editor information

Editors and Affiliations

  1. Institute of Physics, Academy of Sciences of the Czech Republic, Prague, Czech Republic

    Miroslav Kotrla

  2. Physics Department, Solid State Division, University of Ioannina, Ioannina, Greece

    Nicolas I. Papanicolaou

  3. The Blackett Laboratory, Imperial College, London, UK

    Dimitri D. Vvedensky

  4. Department of Physics, Florida Atlantic University, Boca Raton, Florida, USA

    Luc T. Wille

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© 2002 Springer Science+Business Media Dordrecht

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Craciun, V., Singh, R.K. (2002). Ultraviolet-Assisted Pulsed Laser Deposition of Thin Oxide Films. In: Kotrla, M., Papanicolaou, N.I., Vvedensky, D.D., Wille, L.T. (eds) Atomistic Aspects of Epitaxial Growth. NATO Science Series, vol 65. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0391-9_40

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  • DOI: https://doi.org/10.1007/978-94-010-0391-9_40

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-0675-3

  • Online ISBN: 978-94-010-0391-9

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