Abstract
The effect of heat treatment (up to 1570 K) under hydrostatic argon pressure (up to 1.2 GPa) on silicon implanted with helium and oxygen was investigated by transmission electron microscopy, X-ray diffraction and related methods. The treatment results in specific stress-related changes of Si/Si:He/Si and Si/Si:O/Si structures, especially in dislocation density. Such investigations can help in understanding the effect of stress at the layer/substrate interface during epitaxial growth and thermal treatment.
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© 2002 Springer Science+Business Media Dordrecht
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Misiuk, A. et al. (2002). Effect of Annealing At High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen. In: Kotrla, M., Papanicolaou, N.I., Vvedensky, D.D., Wille, L.T. (eds) Atomistic Aspects of Epitaxial Growth. NATO Science Series, vol 65. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0391-9_35
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DOI: https://doi.org/10.1007/978-94-010-0391-9_35
Publisher Name: Springer, Dordrecht
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